FCD3400N80Z

Vgs(th) (Max) @ Id:	4.5V @ 200µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	32W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	400pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	9.6nC @ 10V
Series:	SuperFET® II
Rds On (Max) @ Id, Vgs:	3.4 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	2A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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FCD3400N80Z application field and working principle

FCD3400N80Z is a type of FET (Field Effect Transistor) that belongs to the Single MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) family. FETs are active semiconductor components that use electric fields to control the conductivity of electronic circuits. FCD3400N80Z are particularly useful because they can be easily implemented both in analog and digital circuits. The FCD3400N80Z is an enhancement-mode MOSFET, meaning that they switch on (conduct) when they are exposed to a certain amount of voltage. In this case, the gate voltage must be higher than the source voltage (Vg>Vss). This makes it possible to create complex circuits that are small and power efficient. FCD3400N80Z is also capable of blocking reverse currents and working at high voltages and frequencies. FCD3400N80Z can be used in a wide range of applications, such as in communication equipment, solar cells, and medical devices. The most common uses include power management, motor control, audio amplifiers, transceivers, voltage regulators, and switching converters. The FCD3400N80Z MOSFETs have mainly two components: the gate and the drain. The gate is responsible for controlling the conductive channel between the drain and the source. It can be used to regulate the current passing through the FET. The drain is an external part of the FET responsible for delivering current to the load. The FCD3400N80Z’s working principle is based on the MOSFET theory. In this type of transistor, two terminals (gate and drain) are responsible for regulating the electric field. The voltage applied to the gate electrode affects the electric field between the source and drain electrodes. When the gate voltage is greater than the source voltage, the electric field strains the oxide layer between the source and drain and it allows current to flow from source to drain. This is how the FCD3400N80Z switches on. On the other hand, if the source voltage is greater than the gate voltage, the electric field will be reduced, decreasing the source-drain flow of current, and the FCD3400N80Z will be switched off. In conclusion, the FCD3400N80Z is an enhancement-mode MOSFET belonging to the family of Single MOSFETs. This type of transistor is capable of switching on and off easily and efficiently and is used in a wide range of applications. It works by controlling the electric field between the source and drain electrodes and can be used to regulate current and voltage in a wide range of devices.

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