FCD360N65S3R0

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The FCD360N65S3R0 is a type of N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed for power switching and amplification applications in industrial and commercial systems. It is a single, high voltage, and ultra-wideband enhancement mode MOSFET with low On-resistance characteristics, making it well-suited for applications in high frequency switching, power dissipation management, and regulated power supply designs.

The FCD360N65S3R0 is also known as a high-voltage MOSFET, with a breakdown voltage of approximately 360V (at 25°C). The device also has a max drain source voltage of 175V, a typical gate-source Voltage of ±20V, and a max Gate-source voltage of ±25V. It has a typical on resistance (or R DS(ON) )of 65mΩ and a max on resistance of 90mΩ at 4.5V. In terms of its power dissipation capabilities, the FCD360N65S3R0 has a max power dissipation of 6.8W and a thermal resistance (or junction-to-ambient)of 22.8°C/W.

In terms of operation, the FCD360N65S3R0 requires a positive voltage of at least 5V between its Gate and Source terminals (VGSS) to turn the device ON and cause current to flow between its Source and Drain terminals (VDSS). The current flowing through the device, known as the drain current, is proportional to the voltage between the Gate and Source terminals. This makes the FCD360N65S3R0 a voltage-controlled device, with a transconductance of 0.21S.

The device is also capable of operating in two distinct modes: the static ON mode and the dynamic OFF mode. In the static ON mode, the device is ON and current can flow freely between its Source and Drain terminals. This mode can be used in applications such as DC-to-DC converters, power supplies, and voltage regulators where the current flow is continuous.

The dynamic OFF mode, on the other hand, allows the device to turn OFF when the Gate-Source voltage is decreased below a certain threshold. This mode is ideal for applications that require the device to turn ON and OFF rapidly and the Gate-Source voltage has to be changed frequently. In this mode, the device can switch ON and OFF quickly, with fast rise and fall times resulting in minimal signal distortion.

In terms of its application field, the FCD360N65S3R0 is commonly used in power supply, DC/DC converter, and voltage regulator designs as it has very low On-resistance characteristics, allowing for high efficiency and low power dissipation. It can also be used in high frequency switching applications, as the low on-resistance results in minimal signal distortion due to its fast switching times. Additionally, the device can be used in the power dissipation management designs, as its low on-resistance means that the device will not draw excess current when it is ON and will not generate excessive heat.

Overall, the FCD360N65S3R0 is a versatile MOSFET designed for power switching and amplification applications in industrial and commercial systems. It has low on- resistance characteristics, allowing it to be used in applications such as DC/DC converter designs, high frequency switching, power dissipation management, and regulated power supply designs. Additionally, the device has a breakdown voltage of approximately 360V, max drain source voltage of 175V, typical R DS(ON) of 65mΩ, and max power dissipation of 6.8W, making it well-suited for applications that require high operating voltage and power. Furthermore, the device can operate in two distinct modes: the static ON mode and the dynamic OFF mode, allowing it to be used in both continuous and rapid switching applications.

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