FCD380N60E

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The FCD380N60E is a high-voltage, high-speed N-channel insulated-gate power field effect transistor (IGFET). It is a type of field effect transistor (FET) with an insulated gate that controls current flow between a source and a drain. The FCD380N60E is a high-generation FET that is widely used in power management in consumer electronics and other power applications. It has an extreme ruggedness, high-speed switching, low input capacitance, low gate charge, and low gate-body leakage current.

The FCD380N60E is manufactured using advanced planar high-voltage technology. This allows for higher operating currents compared to standard transistors. The FET is constructed of an epitaxial-planar silicon substrate and N-Channel MOSFET in a D-MOSFET topology. It has a maximum drain-source voltage (Vds) of 600 V, drain current (Id) up to 375 A, and total gate charge (Qg) of 17.6 nC. The device also features a low threshold voltage (Vth) of 1.15 V, a falling ramp time of 8 ns, a rising ramp time of 4 ns, and a body diode reverse recovery time of less than 10 ns.

The FCD380N60E is suitable for medium-to-high voltage applications since it can handle up to 600 V at high frequencies. Due to its improved switching speed and thermal performance, it can also be used in motor drives, as well as high-frequency power conversion circuits. The FCD380N60E also has an exceptionally low gate charge, making it an ideal choice for applications that require high power conversion efficiency. Additionally, the FCD380N60E is an ideal choice for high-density power management systems due to its low capacitance and low RDS(ON) leakage current.

The working principle behind the FCD380N60E relies on the PN junction formed between its source and drain. When the driving signal is applied to the gate, a voltage-controlled current can then be used to either increase or decrease the current between the source and drain. This allows the FET to switch on or off quickly and efficiently. When the signal is removed, the current stops and the device returns to its original state.

The FCD380N60E is a versatile FET and can be used in a variety of applications, including power management, motor drives, high-frequency power conversion circuits, and other high-density powermanagement systems. Its advanced planar high-voltage technology contributes to its reliable operation and overall performance. Thanks to its low gate-charge, high current capacity, and fast switching capabilities, the FCD380N60E is an ideal solution for any power-management application.

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