FCD4N60TF Discrete Semiconductor Products |
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Allicdata Part #: | FCD4N60TFTR-ND |
Manufacturer Part#: |
FCD4N60TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 3.9A DPAK |
More Detail: | N-Channel 600V 3.9A (Tc) 50W (Tc) Surface Mount D-... |
DataSheet: | FCD4N60TF Datasheet/PDF |
Quantity: | 1000 |
Gate Charge (Qg) (Max) @ Vgs: | 16.6nC @ 10V |
Base Part Number: | FCD4N60 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 540pF @ 25V |
Vgs (Max): | ±30V |
Series: | SuperFET™ |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.9A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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Introduction
FETs (Field Effect Transistors) are widely used in many different applications such as radio frequency amplifiers, power supplies and switching circuits. The FCD4N60TF is a type of FET that is most commonly used for power applications. This article will discuss the application field and working principle of the FCD4N60TF.
Application Field of FCD4N60TF
The FCD4N60TF can be used in a wide range of applications due to its high voltage and current capability. It is widely used in applications such as DC-DC converters, motor drivers, induction heating, switching power supplies and renewable energy systems. It is also used in solar panels and high frequency industrial machinery. This device is ideal for fast switching applications due to its low capacitance and low on-resistance.
Working Principle of FCD4N60TF
The FCD4N60TF is a type of field-effect transistor (FET) built on an n-type silicon substrate. It consists of a source, a gate, a drain, and an insulated gate. The source is connected to the drain, and a voltage can be applied across the source and drain electrodes. When a positive voltage is applied to the gate electrode, electrons are attracted to it, and a conducting channel is formed between the source and drain. This in turn creates a “passable” route for current to flow from the source to the drain. When the gate voltage is reversed, the conducting channel is reduced and current flow is greatly reduced or shut off completely.
Advantages of FCD4N60TF
The FCD4N60TF offers a number of advantages over other types of FETs. It has an extremely low on-resistance, meaning that it can achieve very high switching frequencies. This makes it ideal for use in switching power supplies or motor controllers. It also helps it to produce very low power losses, making it ideal for use in high-efficiency applications. It also has a very low input capacitance, meaning that it can respond quickly to input signals and can be used in high frequency applications. In addition, the FCD4N60TF is very robust, making it suitable for use in harsh environments.
Conclusion
The FCD4N60TF is a type of FET that is most commonly used in power applications. It has an extremely low on-resistance, making it ideal for fast switching applications. It also has a very low input capacitance, meaning that it can respond quickly to input signals. In addition, the FCD4N60TF is very robust, making it suitable for use in harsh environments. Finally, it is widely used in applications such as DC-DC converters, motor drivers, induction heating, switching power supplies and renewable energy systems.
The specific data is subject to PDF, and the above content is for reference
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