Allicdata Part #: | FCD4N60TM_WSTR-ND |
Manufacturer Part#: |
FCD4N60TM_WS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 3.9A DPAK |
More Detail: | N-Channel 600V 3.9A (Tc) 50W (Tc) Surface Mount D-... |
DataSheet: | FCD4N60TM_WS Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Gate Charge (Qg) (Max) @ Vgs: | 16.6nC @ 10V |
Base Part Number: | FCD4N60 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 540pF @ 25V |
Vgs (Max): | ±30V |
Series: | SuperFET™ |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.9A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FCD4N60TM-WS is a Power Field Effect Transistor (FET) designed to drive high power loads in automotive and other power applications. It features a wide safe operating area (SOA) and high maximum current rating making it a reliable and efficient power transistor.
The FCD4N60TM was designed and manufactured using advanced high voltage process technologies making it suitable for a variety of power applications. It features low on-state resistance, high common-source transconductance and low input capacitance, making it ideal for high-efficiency and high frequency switching.
The FCD4N60TM is a N-channel depletion-mode FET organized into a standard three-terminal device with a gate, a source, and a drain. It is especially suitable for high-efficiency, high-power switching applications, as it has a high breakdown voltage, low RDS(on) and built-in Gate protection. Furthermore it provides excellent thermal performance, which allows the FCD4N60TM to handle high power dissipation at elevated temperatures.
The device is provided in a standard TO-3 package, allowing for the use of standard PCB designs for the majority of applications. The package also provides the necessary heat dissipation, allowing the device to be mounted close to the circuit board, significantly reducing the trace routing lengths and minimizing the power dissipation through the PCB.
In operation, the FCD4N60TM functions as an amplifier, meaning that a small gate-to-source signal can control a much larger drain-to-source current flow. When driven correctly, the FCD4N60TM can be used to switch high voltages and high current levels, making it ideal for applications such as switched mode power supplies, motor control, switching regulators and other power management applications.
The FCD4N60TM also features an optional surge-mode feature which allows for improved maximum dissipation capability under certain load conditions. When enabled, the FCD4N60TM can react quickly to sudden voltage or current changes, thus allowing for an improved maximum-dissipation capability compared to the device used in its standard operation mode.
The FCD4N60TM is an ideal choice for numerous automotive and power applications, due to its excellent combination of features. It is able to efficiently handle large currents and provides low on-state resistance, making it compatible with a wide range of automotive eletrical systems. Additionally, it\'s improved thermal and surge-mode capabilities make it well-suited for harsh environments, where high-power loads must be reliably handled.
The specific data is subject to PDF, and the above content is for reference
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FCD4N60TM_WS | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 3.9A DPA... |
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