FCD4N60TM Allicdata Electronics

FCD4N60TM Discrete Semiconductor Products

Allicdata Part #:

FCD4N60TMTR-ND

Manufacturer Part#:

FCD4N60TM

Price: $ 0.43
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 600V 3.9A DPAK
More Detail: N-Channel 600V 3.9A (Tc) 50W (Tc) Surface Mount D-...
DataSheet: FCD4N60TM datasheetFCD4N60TM Datasheet/PDF
Quantity: 2500
1 +: $ 0.43000
10 +: $ 0.41710
100 +: $ 0.40850
1000 +: $ 0.39990
10000 +: $ 0.38700
Stock 2500Can Ship Immediately
$ 0.43
Specifications
Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 10V
Base Part Number: FCD4N60
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
Vgs (Max): ±30V
Series: SuperFET™
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FCD4N60TM is one of the single MOSFETs offered by Fairchild Semiconductor. It is an N-channel enhancement mode PowerTrench® MOSFET designed specifically for applications such as battery powered systems, DC/DC converters and motor drive controls. This MOSFET features both low on-resistance and low total gate charge and is capable of driving both low and high side switches. Furthermore, it is integrated with advanced features such as Zetex ZXGD3004E4S P-Channel MOSFET which are a power-saving alternative. It also features both High Frequency DC Characterization and Low Reverse Healthy Characterization which increases its overall robustness.


FCD4N60TM Application Field

The FCD4N60TM supports a wide range of applications including motor control with high overload protection, battery powered systems and hot-swapping control systems. It can also be used in battery-management systems, OR-ing applications and low voltage DC/DC converters. It is also designed to operate in doubler, shifter and fly-back power supplies. It is also designed to have wide operating temperature range, making it well suited for automotive applications. The FCD4N60TM offers up to 80MA drain current with 4V gate drive.

FCD4N60TM Working Principle

FCD4N60TM is based on the N-channel MOSFET switch principle. When the control voltage (Vgs) is applied to the gate, the device drains current from the source to the drain terminal. This current is controlled by the resistance between the two terminals, which is inversely proportional to the applied voltage. As the voltage is lowered, the resistance increases and the current is decreased. When the gate voltage is reduced to zero, the device turns off and no current can flow from the source to the drain.

The FCD4N60TM also features high-frequency DC characterization which is designed to maximize performance and reliability. It is designed to be highly efficient at low and high gate drive voltages, ensuring fast switching transition time with low gate charge. This also helps reduce switching losses and contributes to power saving.

The FCD4N60TM is an excellent choice for low power applications such as battery management systems, OR-ing applications and low voltage DC/DC converters. Its low on-resistance, high total gate charge, wide operating temperature range and advanced features makes it a suitable choice for today’s energy-efficient, high-speed applications.

The specific data is subject to PDF, and the above content is for reference

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