FCH20N60

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The FCH20N60 is a fast-switching MOSFET produced by Fairchild Semiconductor. It utilizes a P-channel enhancement mode for a low on resistance of 0.04Ω max, making it an efficient choice for high-performance applications. Featuring an increase of drain-sourceV_ds(V) rating from 60V to 80V, this MOSFET offers excellent current handling capacity and improved system safety in higher voltage applications. This device also features a low thermal resistance, allowing for improved heat dissipation.

FCH20N60 Application Field

The FCH20N60 MOSFET is ideal for use in high efficiency converters and processors. Its fast-switching capabilities allow it to be directly used in switching applications such as DC/DC converters, PFC (Power Factor Correction) controllers, and SMPS (Switched Mode Power Supply) controllers. Its low on-resistance makes it an ideal choice for high current applications such as in motor control, lighting, and other power management systems.

Its fast switch-off speeds enable it to be used directly in synchronous buck converters, while its high efficiency ratings can help extend the lifetime and performance of applications operating in extreme temperatures up to 175 Degrees Celsius.

Furthermore, its low power dissipation and robust package design makes it a great choice for protected systems where high data speeds need to be maintained. Its enhanced temperature ratings make it suitable for use in high-temperature environments, and also eliminate the need for costly heatsinks on the device.

FCH20N60 Working Principle

The FCH20N60 is a small-signal MOSFET, belonging to the large family of field effect transistors. It utilizes the principles of a MOSFET to switch voltage signals on and off. When the drain-source voltage, V_ds(V), reaches a specific value, the transistor\'s main body enters its saturation region, which is when it can effectively transmit the voltage signal. This is known as its "on" state. When the V_ds(V) drops to zero volts, the transistor enters its "off" state.

The FCH20N60 is able to sustain a drain-source voltage V_ds(V) of up to 80V, meaning it is suitable for use in a wide variety of situations. This allows it to easily handle higher power requirements, eliminating the need for costly heatsinks to dissipate the heat.

Additionally, the gate-source voltage V_gs(V) plays a major role in the transistor\'s behavior. N-channel MOSFETs such as the FCH20N60, require V_gs(V) to be above certain thresholds for proper operation. This means that if the supply voltage fluctuates, the device will still be able to deliver the desired results.

The FCH20N60 is also capable of achieving high switching speeds. Its built-in protection circuits, along with its low gate-drain capacitance, allow it to switch with excellent speed and accuracy. These features make it perfect for applications requiring high data rates and high frequencies.

Overall, the FCH20N60 is a great choice for applications requiring fast switching speeds, high voltage ratings, and low power dissipation. Its P-channel enhancement mode allows it to work efficiently in high-current applications, while its robust design ensures that it can work without fail in extreme temperatures.

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