| Allicdata Part #: | FCH22N60N-ND |
| Manufacturer Part#: |
FCH22N60N |
| Price: | $ 3.62 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 600V 22A TO-247 |
| More Detail: | N-Channel 600V 22A (Tc) 205W (Tc) Through Hole TO-... |
| DataSheet: |  FCH22N60N Datasheet/PDF |
| Quantity: | 450 |
| 1 +: | $ 3.62000 |
| 10 +: | $ 3.51140 |
| 100 +: | $ 3.43900 |
| 1000 +: | $ 3.36660 |
| 10000 +: | $ 3.25800 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 205W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1950pF @ 100V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
| Series: | SupreMOS™ |
| Rds On (Max) @ Id, Vgs: | 165 mOhm @ 11A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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FCH22N60N is a kind of insulated gate bipolar transistors (IGBTs) produced by Fairchild Semiconductor. It is designed to be used in the most demanding applications where a moderate switching speed is requied. It features a low collector-emitter saturation voltage, low ON-state resistance, low ON-state loss, and high temperature operation. And it provides a great level of design flexibility. This IGBT can be used for a wide range of applications, including power conversion systems such as UPS, power supplies, heating and air conditioning, industrial and other automation systems. It can also be used in motor control applications such as AC and DC motor drives, variable frequency drives, and traction applications. The FCH22N60N is designed to be used in an inverter bridge configuration, where it is typically driven by an external gate driver. When the gate driver turns on, the transistor is driven into an ON state, allowing current to flow through the device. The ON state is then maintained by the positive feedback provided by a resistor connected between the gate and emitter of the FCH22N60N. When the gate driver turns off, the transistor is driven into an OFF state, preventing current from flowing through the device. The FCH22N60N features a maximum collector-emitter voltage of 600V, a maximum gate to emitter voltage of 25V, and a maximum collector current of 100A. It has a typical switching time of 1.4µs for turn-on and 1.1µs for turn-off. It also has a low gate threshold voltage of 1.5V and an operating temperature range from -55°C to 175°C. Overall, the FCH22N60N is a great choice for applications that require moderate switching speeds, low voltage and current losses, and high temperature operation. It is also highly reliable and easy to implement, making it ideal for use in a number of different applications.
The specific data is subject to PDF, and the above content is for reference
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