
FCH25N60N Discrete Semiconductor Products |
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Allicdata Part #: | FCH25N60N-ND |
Manufacturer Part#: |
FCH25N60N |
Price: | $ 5.73 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 25A TO-247 |
More Detail: | N-Channel 600V 25A (Tc) 216W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 225 |
1 +: | $ 5.72670 |
10 +: | $ 5.55490 |
100 +: | $ 5.44036 |
1000 +: | $ 5.32583 |
10000 +: | $ 5.15403 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 216W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3352pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 74nC @ 10V |
Series: | SupreMOS™ |
Rds On (Max) @ Id, Vgs: | 126 mOhm @ 12.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FCH25N60N is a Voltage Block N-Channel Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) suitable for applications up to 600 volts. The FCH25N60N is a high voltage, high current MOSFET, designed to operate in conditions of severe ambient temperature and high junction temperature. An essential feature of this MOSFET is its excellent power dissipation capability and high speed switching characteristics. This makes the FCH25N60N an ideal choice for a variety of applications, ranging from high voltage DC motor control to high efficiency power supplies.
The FCH25N60N is a vertical double diffused MOSFET that works based on the principle of majority carrier conduction. The two-terminal drain and source contacts are connected to the device substrate through a pair of diffusion layers. The main difference between the FCH25N60N and other MOSFETs lies in the structure of its drain and source terminals. The FCH25N60N has an isolated gate contact, which helps to reduce leakage at high drain source voltages.
The FCH25N60N is great for use in power management applications, such as switch mode power supplies, DC-DC converters, motor drives and other electronic switching applications. It is also used in battery charger circuits and is suitable for the high speed switching of lighting, switching in inverters, and for any application that requires high voltage, high current capability.
The FCH25N60N is rated at 25 amps of continuous drain current at a junction temperature of 150C. It has a maximum drain-source voltage of 600 volts and a maximum drain-gate voltage of 20 volts. The FCH25N60N is capable of fast switching speeds with a drain-source on-resistance of 2.2 milliohms at 10 volts, 1.2 milliohms at 25 volts, and 1 milliohm at 50 volts. The FCH25N60N also offers high-power dissipation with a maximum Drain to Source power dissipation of 150 watts.
The FCH25N60N has a number of advantages over other power MOSFETs, and it is one of the most popular devices in the market today. It features excellent thermal performance, fast switching speeds, low on-resistance values, and low gate charge. These features all make the FCH25N60N an excellent choice for a variety of applications requiring high voltage and high current switching.
The FCH25N60N is a highly reliable device, capable of handling up to 6A continuous current at a maximum junction temperature of 150°C. Its industry-leading thermal properties make it suitable for a wide range of applications, and its fast switching speeds make it an ideal choice for power management applications. The FCH25N60N is also an excellent choice for any application requiring high power dissipation and high switching speed.
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