Allicdata Part #: | FDAF59N30-ND |
Manufacturer Part#: |
FDAF59N30 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 300V 34A TO-3PF |
More Detail: | N-Channel 300V 34A (Tc) 161W (Tc) Through Hole TO-... |
DataSheet: | FDAF59N30 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | SC-94 |
Supplier Device Package: | TO-3PF |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 161W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4670pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
Series: | UniFET™ |
Rds On (Max) @ Id, Vgs: | 56 mOhm @ 17A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 34A (Tc) |
Drain to Source Voltage (Vdss): | 300V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FETF59N30 is one of the latest devices available as a metal oxide semiconductor field effect transistor (MOSFET) device. It is a single-mode device, meaning that it is rated to work only with one type of current, either direct current (DC) or alternating current (AC). The FETF59N30 is manufactured by Samsung Electronics and is available in either a through-hole or a surface mount technology. The device can be mounted in any direction and offers a wide range of features that are well-suited for a variety of applications.
The FETF59N30 is a N-Channel MOSFET and acts as a switch between two power sources of electricity. It is constructed from a metal oxide semiconductor in a insulated monolithic chip. The device has a voltage rating of 30V and a maximum drain to source current of 59A. It is housed in a TO-220 package and is readily available for engineers to use in their designs.
The device’s voltage rating and its ability to handle large current flow make it well-suited for a variety of applications. The FETF59N30 is suitable for applications such as power supplies and motor drives, switching operations in an automotive circuit, and home appliances. The device is also ideal for applications such as server power control, industrial lighting, and UPS systems. Additionally, it can be used in consumer electronics such as televisions, audio amplifiers, and other devices.
The FETF59N30 device operates using the principle of voltage control of current flow. This principle states that current will flow from the source to the drain only when the gate receives the appropriate voltage. When the voltage on the gate is equal to a specific voltage threshold, the gate opens and current is allowed to flow from the source to the drain. When the gate voltage is lowered, the gate closes and the current cannot flow between the source and drain.
The FETF59N30 also includes built-in protection against short-circuiting and thermal faults. The device also includes a built-in thermal resistor and protection diode. The diode helps prevent unwanted electrical current from flowing through the device. This helps to protect the device from over-currents which could potentially damage the device.
The FETF59N30 is an excellent device for engineers to use when designing new systems. Its ease of use, along with its ability to handle high currents, make it a very versatile and reliable device for a variety of applications. The device’s built-in safety features and protection are also an added benefit for engineers, as these features help ensure the device will not be harmed if an unexpected electrical event occurs.
The specific data is subject to PDF, and the above content is for reference
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