FDAF75N28

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FDF75N28 is a field-effect transistor (FET) offering a low on-resistance and reduced gate charge. It belongs to the 75V N-channel Enhanced Performance FET (eFET) family that offers a cost-effective design alternative that can handle up to 18A and 75V. It is an integrated FET – MOSFET ® single in a TO-252AA (DPAK) package.

The FDF75N28 has features that make it an ideal choice for high-current, high-density power management applications. It is a N-Channel enhancement mode MOSFET with a maximum power dissipation of 36 Watts and a maximum drain-to-source voltage of 75 volts. It is well-suited for switching loads such as motors, pumps, relays, and solenoids. The maximum on-state resistance is rating is typically 0.33 ohms at a 10V gate-source voltage.

In a FET single, the MOSFET is a type of transistor that uses applied voltage on the gate to open or close an electrical circuit. It is an improvement over the BJT, which uses a higher voltage to activate. FETs also have high switching speeds, making them ideal for use in high frequency circuits. FDF75N28 FETs are typically used as power switches in high-current, high-density applications for computer power supplies, appliance control, lighting, motor control and more.

The FDF75N28 uses an N-channel MOSFET in a DPAK package to create an efficient device suitable for many applications. It has an on resistance of 0.33 ohms, a RDS(on) max of 0.3917ohm and gate charge of 30nC. The gate threshold voltage is rated at 4.7V and the gate-to-source voltage is rated at 10V. The device also features fast switching speeds, wide range of drain voltages, low gate charge and low gate-source voltage requirements.

The working principle behind FDF75N28 is relatively simple. When voltage is applied to the gate of the FET, it changes the characteristics of the channel by creating a field between the gate and the drain. This field modifies the electrical resistance between the drain and the source, allowing current to flow through the FET. The greater the voltage applied to the gate, the higher the current allowed to pass through the FET and the lower the resistance at the drain.

Due to its high drain-sourced voltage rating, low on-state resistance and low gate-source voltage requirements, the FDF75N28 is an ideal choice for a wide variety of applications. It is the perfect choice for high-current, high-density power management applications such as computer power supplies, appliance control, lighting, motor control and more. It is also well-suited for other applications such as switching loads such as motors, pumps, relays and solenoids.

In summary, the FDF75N28 is a 75V N-channel Enhanced Performance FET (eFET). It is an integrated FET – MOSFET single in a TO-252AA (DPAK) package. It offers a low on-resistance and reduced gate charge, and is perfect for power management applications that require a high current and high density. The FDF75N28 works by regulating the flow of current between the drain and source, using applied voltage at the gate to control the electrical resistance of the channel. It is the ideal choice for applications such as motor and relay control, computer power supplies and more.

The specific data is subject to PDF, and the above content is for reference