Allicdata Part #: | FDAF69N25-ND |
Manufacturer Part#: |
FDAF69N25 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 250V 34A TO-3PF |
More Detail: | N-Channel 250V 34A (Tc) 115W (Tc) Through Hole TO-... |
DataSheet: | FDAF69N25 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | SC-94 |
Supplier Device Package: | TO-3PF |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 115W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4640pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
Series: | UniFET™ |
Rds On (Max) @ Id, Vgs: | 41 mOhm @ 17A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 34A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FDFA69N25 is a surface-mounted, single- gate MOSFET (Metal-Oxide- Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. It has a low voltage and low current application field due to its typical drain-source on-resistance of 10 ohms and low gate threshold voltage (Vgs) requirements.
The FDFA69N25 device is ideal for applications such as battery-powered devices, portable electronics, and consumer electronic devices. It is a power MOSFET designed to provide a low on-resistance to ensure a good load current switch and efficient power supply. The MOSFET can also act as a variable resistor allowing users to adjust the drain current with a variable gate voltage setting.
Working principle of FDFA69N25
The structure and working principle of MOSFETs are basically the same as that of a JFET. The device has a semiconducting channel formed in between the source and the drain, this is why MOSFETs are commonly referred to as “Channel FET”. The most important factor in a MOSFET’s operation is the gate voltage, which controls the drain current.
The source and drain regions of a MOSFET are located in a semiconducting channel, and the gate, which is not electrically connected, is located several nanometers away from the channel. When there is a positive voltage applied to the gate voltage, it produces an electric field between the gate and channel which attracts carriers to the surface of the channel, forming a conducting region. The higher the gate voltage, the stronger the electric field, and the higher the channel conductivity.
In the FDFA69N25 device, the channel conductivity increases with the gate voltage and eventually the device is saturated and operates as a completly turned on switch. The saturation region is the point of maximum current flow and when the gate voltage is decreased, the channel conductivity is reduced and the device is turned off.
In sum, the FDFA69N25 has a low voltage, low current application field due to its typical drain-source on-resistance of 10 ohms and low gate threshold voltage (Vgs) requirements, making it ideal for batteries powered devices, portable electronics, and consumer electronic devices.
The specific data is subject to PDF, and the above content is for reference
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