| Allicdata Part #: | FDB52N20TMTR-ND |
| Manufacturer Part#: |
FDB52N20TM |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 200V 52A D2PAK |
| More Detail: | N-Channel 200V 52A (Tc) 357W (Tc) Surface Mount D²... |
| DataSheet: |  FDB52N20TM Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D²PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 357W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2900pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 10V |
| Series: | UniFET™ |
| Rds On (Max) @ Id, Vgs: | 49 mOhm @ 26A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 52A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The FDB52N20TM is a power MOSFET transistor, specifically designed for switching applications. It is manufactured by the Fairchild Semiconductor company and is a member of its N-channel MOSFET family.
The FDB52N20TM is primarily used in high-side switching as it is specifically designed to carry currents of up to 20 Amps while handling voltage levels up to 100 Volts. This makes it ideal for use in a wide range of applications, such as automotive and industrial control circuits, motor control circuits, light dimming applications, and switch-mode power supplies. It is also compatible with standard MOSFET drivers, and is suitable for a variety of low voltage, low-power switching.
One of the main advantages of using the FDB52N20TM is its low on-resistance. This ensures that the device does not need to dissipate large amounts of power when in use. This, in turn, keeps the operating temperatures of the device low, which helps to extend its operational lifetime. Additionally, the FDB52N20TM has a fast switching rate, which helps to reduce the amount of energy wasted during switching operations.
The FDB52N20TM has a metal-oxide semiconductor (MOS) construction and operates through the application of gate voltage. When the gate voltage is applied, the existing electric field is reduced, allowing electrons to flow freely between the drain and source. This, in turn, switches the device on. Conversely, when the gate voltage is removed, the electric field reforms, blocking the flow of electrons and thus switching the device off.
The FDB52N20TM also boasts a number of protection features to ensure its reliable operation. These include the built-in protection against short-circuit, over-temperature, and electrostatic discharge. Additionally, the device features an integrated diode which provides protection against negative gate voltage.
In conclusion, the FDB52N20TM is an ideal choice for a wide variety of high-side switching applications due to its low resistance, high current capacity, fast switching speed, and numerous safety features. This makes it a popular device among engineers, as it can be used with confidence in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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