Allicdata Part #: | FDB5800_F085-ND |
Manufacturer Part#: |
FDB5800_F085 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 80A D2PAK |
More Detail: | N-Channel 60V 14A (Ta), 80A (Tc) 242W (Tc) Surface... |
DataSheet: | FDB5800_F085 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 242W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6625pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 135nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Ta), 80A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FDB5800_F085 is a high-performance MOSFET found in high-end power supplies, microcontrollers, and logic gates, among other devices. It is a single-transistor, bipolar junction FET, meaning it is composed of a single source, drain, and gate. This makes it suitable for high-end applications that require low-noise performance, high precision, fast switching speeds, and high reliability.
The main application of the FDB5800_F085 is in high-end power supplies and in power systems, where its low-noise performance and high precision are especially valued. It is also found in a wide range of other industrial and consumer electronics products, such as microcontrollers and logic gates. It is very often used in microcontrollers due to its ability to provide quick switching speeds and a high level of reliability.
The FDB5800_F085 works by using an insulated gate to control the flow of electrical current between the source and the drain. The gate is designed so that when a voltage is applied to it, the gate will create an electric field. This electric field will attract electrons from the source, creating a channel between it and the drain. The amount of current that will flow through this channel is determined by the size of the electric field and the amount of voltage being applied to the gate.
The main benefit of using the FDB5800_F085 for high-end applications is its ability to provide high switching speeds and high reliability in a small, cost-effective package. It also offers low noise levels, meaning it can be used in applications where interference needs to be kept to a minimum. Additionally, it is suitable for a wide range of operating temperatures and environmental conditions, making it suitable for both indoor and outdoor applications.
Overall, the FDB5800_F085 is an excellent choice for high-end power supplies, microcontrollers, and logic gates. It offers high levels of performance, reliability, and speed in combination with a low noise level and a wide range of operating temperatures, making it suitable for a variety of applications. Additionally, its cost-effectiveness makes it a great option for many electronic products.
The specific data is subject to PDF, and the above content is for reference
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