FDB5690 Allicdata Electronics

FDB5690 Discrete Semiconductor Products

Allicdata Part #:

FDB5690TR-ND

Manufacturer Part#:

FDB5690

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 32A TO-263AB
More Detail: N-Channel 60V 32A (Tc) 58W (Tc) Surface Mount TO-2...
DataSheet: FDB5690 datasheetFDB5690 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Power Dissipation (Max): 58W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 27 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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A FDB5690 field effect transistor (FET) is a type of Field Effect Transistor that provides excellent performance in a variety of applications. This versatile device offers a 50-milliamp operational current capacity and is characterized by having a low-gate voltage threshold. This allows for operation at voltages as low as 3 volts, making it suitable for use in low-power applications. The FDB5690 is constructed from a N-channel MOSFET (metal oxide semiconductor field effect transistor) and is composed of three pins. It can accommodate a variety of temperatures over a wide range of flux densities and is commonly used in low-power, discrete, and digital applications.

Understanding the working principle of a FDB5690 is essential for engineers and technicians to effectively utilize the device in their projects. This device functions as an amplifier, switching device and current limiter, so it can be used in a range of applications, including logic circuits and power management systems. To explain how a FDB5690 operates, it is important to first understand the three pins that make it up. The source and drain pins are connected to the substance that carries the current. The gate pin allows the current to be regulated and is typically connected to a control voltage or some type of switching device. When a positive voltage is applied to the gate, the MOSFET will turn on and will let current flow through.

The FDB5690 FET can be used in a variety of applications, including logic circuits, power management systems, and robotics. Logic circuits are a form of embedded microcontroller technology and are used to create millions of tiny and complex systems that range from medical technology to consumer electronics. A notable example of a logic circuit that utilizes the FDB5690 FET is the integrated circuit (IC). Power management systems are essential for controlling the flow of power in numerous uses, from industrial and commercial processes to military and aerospace systems. The FDB5690 provides excellent performance and operational stability for such applications. Robotics is becoming increasingly prevalent, with machines and robots being used for a variety of tasks. The FDB5690 is increasingly being employed in robotics for applications such as signal transmission and sensor detection, making it an essential device for this industry.

In summary, the FDB5690 Field Effect Transistor is a versatile device, providing excellent performance and operational stability in a variety of low-power, discrete, and digital applications. With three pins and a 50-milliamp operating current, this device can be used in logic circuits, power management systems, and robotics to perform switching, amplifying, and current-limiting functions. The FDB5690’s low-gate voltage threshold makes it suitable for use in low-power applications, making it an increasingly popular choice when it comes to a range of projects.

The specific data is subject to PDF, and the above content is for reference

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