Allicdata Part #: | FDB6030BL-ND |
Manufacturer Part#: |
FDB6030BL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 40A TO-263AB |
More Detail: | N-Channel 30V 40A (Tc) 60W (Tc) Surface Mount R-6 |
DataSheet: | FDB6030BL Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | R-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Power Dissipation (Max): | 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1160pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FDB6030BL is a commonly used transistor in a variety of technologies, making it a reliable and versatile component for electronic devices. In a digital context, FDB6030BL transistors are used for their ability to control relatively high currents, and for their small size. In particular, the FDB6030BL is a single N-channel MOSFET, meaning it has an insulated gate and can be used for high and low side driver applications. As such, it is often used in power systems, audio systems and automotive systems, as well as for current sensing and controlling in microcontrollers.
The FDB6030BL is one of the most popular transistors on the market, with its small size, affordable construction and wide range of applications making it a popular choice. With an RDS(on) of 0.083 ohms, this MOSFET can be used to handle up to 11 A of continuous current and up to 62 A of peak current. It also has an impressive maximum voltage rating of 28 V, allowing it to handle large voltage differences when used in a power system.
The working principle of the FDB6030BL transistor is relatively simple. It consists of an N-channel insulated gate MOSFET with n-type source and drain regions. The insulated gate is connected to the gate signal voltage which can be pulsed or switched between high and low levels. When the signal is at a low voltage level, the device is said to be off.
When activated, the FDB6030BL transistor works by using the gate to control the flow of current between the source and drain regions. Depending on the application, the FDB6030BL can be used as a high side driver, high side switch, or low side switch, allowing the user to configure the device for different purposes. The flexibility of this transistor also means it can be used for level-shifting and voltage conversion as well.
The FDB6030BL is incredibly versatile and can be used in a variety of different circuits or applications. It is particularly useful for applications where fast switching or current sensing is needed, such as in motor control, automotive systems, audio systems, power supplies, and in digital systems. Because of its small size, it is also ideal for use in space-limited applications, such as portable devices.
Overall, the FDB6030BL is a reliable and powerful transistor that can be used in a variety of applications. With its low RDS(on) of 0.083 ohms and impressive voltage rating of 28 V, it is one of the most popular transistors on the market and is sure to remain a reliable and versatile component for many years to come.
The specific data is subject to PDF, and the above content is for reference
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