FDB6670AL Allicdata Electronics
Allicdata Part #:

FDB6670AL-ND

Manufacturer Part#:

FDB6670AL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 80A D2PAK
More Detail: N-Channel 30V 80A (Ta) 68W (Tc) Surface Mount TO-2...
DataSheet: FDB6670AL datasheetFDB6670AL Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The FDB6670AL is a power metal-oxide-semiconductor field-effect transistor (MOSFET) that has a wide range of potential applications in power control. MOSFETs are common types of transistors used for driving large amounts of current, and the FDB6670AL takes this concept to the next level in terms of power capability and efficiency. This article will briefly cover the application field and explain the working principle of the FDB6670AL.

The FDB6670AL is designed for use in a wide range of applications, including DC-DC regulation, motor control, and various audio power management systems. The transistor has a breakdown voltage of 650V, and a TO- 247 package. This means that it is suitable for operations where high power is needed and can handle voltages up to 650 volts. Its energy efficiency is also very high, resulting in lower power consumption and higher efficiency compared to other transistors.

The working principle of the FDB6670AL is based on the same principles as most MOSFETs. It consists of two main parts, the gate and the drain. When a current is applied to the gate, a barrier is created between the gate and the drain which prevents the current from flowing through the transistor. This barrier is called the depletion zone because a depletion layer forms in the vicinity of the gate, preventing any current from passing through it. The width of the depletion zone depends on the amount of current applied to the gate, and it is this variance that is used to control the current flow through the transistor.

In order to further control current flow, the FDB6670AL also uses an integrated gate driver. The gate driver uses the same principles of depletion zones to control the voltage applied to the gate. This allows the device to achieve extremely precise control with minimal energy losses. The result is a highly efficient transistor that can be used in a wide range of applications where high power control is required.

The FDB6670AL is a powerful and efficient device that can be used in a wide range of applications, including motor control and DC-DC regulation. It is comprised of two main parts, the gate and the drain, and uses a combination of depletion zones and gate drivers to precisely control the current flow through it. The device\'s high power capabilities and energy efficiency make it an ideal choice for applications where precise control of large amounts of current is needed.

The specific data is subject to PDF, and the above content is for reference

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