FDB6670AS

FDB6670AS is an advanced field-effect semiconductor device designed for power management in a wide variety of applications. It is a high-voltage, low gate-source leakage and low on-resistance MOSFET designed for high efficiency applications. The FDB6670AS is an ideal choice for use in high-voltage DC/DC converters and high power switching applications such as inverters, DC-DC converters, SMPSs (Switch Mode Power Supplies), motor drivers and IGBT gate drivers.The FDB6670AS is a single MOSFET with a metal–oxide–semiconductor field-effect transistor structure that allows the device to switch between conducting and non-conducting states. The device also features an ultra-low gate leakage of ~2.0 x 10-11, thus reducing the power dissipation associated with gate leakage and enabling lower operating temperatures. In addition, the part features low on-resistance, ensuring low losses during on-state operation. The part also features an excellent temperature and load-dependent performance, enabling reliable operation over a wide range of temperatures and loads.The FDB6670AS is designed for use in a variety of applications, including high power switching and power management applications, such as DC-DC converters and SMPSs. Additionally, the device proves ideal for use in light driver applications, inverters, UPS systems, and motor drivers applications.The FDB6670AS is designed for high efficiency, low conduction loss, and fast switching characteristics. Its on-resistance is designed to be as low as 0.018 Ω to reduce losses during on-state operation. The FDB6670AS has a drain-source breakdown voltage of up to 800V and a positive channel body diode with reverse recovery time of 10 ns or less (Tj = 25°C).The FDB6670AS features low threshold voltage, offering improved gate drive requirements and low gate charge, reducing gate driver power consumption. Additionally, the device’s ultra-low gate leakage improves overall part reliability and operating temperature.In addition, the FDB6670AS features over-current protection and overvoltage protection, reducing current spikes even further and protecting the device from fault conditions. The device’s thermal design ensures that the semiconductor does not overheat even in high-power applications, and its junction temperature can be monitored for improved safety. The FDB6670AS is designed for use with a variety of gate drivers and can be used as a top or bottom side MOSFET. Additionally, the part is designed to be used in parallel, improving total power dissipation capability. To summarize, the FDB6670AS is an advanced field-effect semiconductor device designed for power management applications. It features a metal–oxide–semiconductor field-effect transistor structure, ultra-low gate leakage of ~2.0 x 10-11, low on-resistance, excellent temperature and load-dependent performance, a drain-source breakdown voltage of up to 800V, low threshold voltage and low gate charge, over-current protection and overvoltage protection, and can be used with a variety of gate drivers.

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