Allicdata Part #: | FDC5612TR-ND |
Manufacturer Part#: |
FDC5612 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 4.3A SSOT-6 |
More Detail: | N-Channel 60V 4.3A (Ta) 1.6W (Ta) Surface Mount Su... |
DataSheet: | FDC5612 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | SuperSOT™-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 650pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 55 mOhm @ 4.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.3A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FDC5612 is a type of a field-effect transistor (FET), a type of transistor. It is distinguished from other types of transistors by its unique construction method, which allows it to efficiently control the current flowing between two terminals known as the source and the drain. The transistor is categorized as a MOSFET, which stands for metal-oxide-semiconductor field-effect transistor, and comes in the single package format.
The FDC5612 is an FET used for a wide variety of applications, including power supply regulation and switching, audio amplifier operations, and automobile fuel injection systems. It is also used in digital logic applications, such as data transfer, memory, and logic gate circuits.
FETs are type of transistors that use an electric field to control the current flow through the device. This is done by creating a potential barrier, called the gate terminal, between the source and the drain. When a voltage is applied to the gate, it causes the charges at the interface between the source and the drain to change, which in turn affects the overall current that can flow through the device. The FDC5612 is unique in that it is a MOSFET, meaning that it uses a metal-oxide-semiconductor substrate to form a transistor. This type of substrate is much more efficient at controlling the current than traditional silicon-based transistors.
One of the biggest advantages of the FDC5612 is its low power dissipation. This is due to the fact that it does not use a traditional base layer like other transistor types, such as BJTs, which require additional current, resulting in higher power loss. In addition, the device is more efficient at regulating current due to its gate terminal, resulting in a lower voltage drop when the device is in use. This can result in significant power savings, especially in applications which require a constant current flow.
Another benefit of the FDC5612 is its excellent accuracy when controlling current. This type of transistor is particularly adept at switching small currents with very little distortion. This is due to the highly efficient and precise way in which the gate terminal functions. Additionally, the device operates over a wide temperature range, making it ideal for applications which require high temperature performance, such as automotive fuel injection systems.
Overall, the FDC5612 is a highly efficient and reliable type of transistor which is used in a number of applications. Its low power consumption and precise current control make it a popular choice for many different applications, from power supply regulation to digital logic. Its wide temperature range and excellent accuracy further add to its appeal, making it a valuable device for a variety of projects and applications.
The specific data is subject to PDF, and the above content is for reference
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