FDC5614P_D87Z Allicdata Electronics
Allicdata Part #:

FDC5614P_D87Z-ND

Manufacturer Part#:

FDC5614P_D87Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 60V 3A 6SSOT
More Detail: P-Channel 60V 3A (Ta) 1.6W (Ta) Surface Mount Supe...
DataSheet: FDC5614P_D87Z datasheetFDC5614P_D87Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT™-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 759pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 105 mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The FDC5614P_D87Z is a type of metal-oxide-semiconductor field effect transistor (MOSFET). MOSFETs are a type of field effect transistor (FET) which act as an electronic switch, and are widely used in a variety of applications, such as amplifiers and voltage regulators. This particular type of MOSFET is a single, which means that it has one gate, one source and one drain. MOSFETs provide high input impedance, fast switching speed, low on-resistance and low drive power, making them the device of choice for many applications.

The FDC5614P_D87Z is a low voltage, N-channel, enhancement mode MOSFET, with an RDSON of 1.2nA. This makes it suitable for use in applications requiring fast switching, such as power regulators and other low voltage applications. In addition, the device has an Avalanche energy rating of 8.5µJ, which allows it to be used in higher speed applications without the risk of potential failure. It is also capable of withstanding voltages up to 20V and is rated for temperatures up to 175°C.

The FDC5614P_D87Z has a wide range of applications and can be used for many different purposes. It is suitable for power switching, as it can switch loads up to 20V and 1A. It can also be used as a level shifter, voltage regulator, or as a power amplifier in audio systems. Additionally, it can also be used in automotive and industrial systems. The device can also be used to control resistive, inductive and capacitive loads, and is suitable for digital logic level control.

The working principle of the FDC5614P_D87Z is based on the principle of the FET, or field effect transistor. In this type of device, an electric field is used to induce a current flow between the source and drain. When a voltage is applied to the gate terminal, this electric field is increased, which in turn increases the resistance between the source and drain. This allows the device to act as an electronic switch, allowing or blocking the flow of current, depending on the voltage applied to the gate.

In summary, the FDC5614P_D87Z is a type of low-voltage, N-channel, enhancement mode MOSFET, which is widely used in a variety of applications, such as power switching, voltage regulation and audio amplification. It has a high input impedance, fast switching speeds, low RDSON and low drive power, making it well-suited for many applications. The working principle of the device is based on the principle of the FET, in which an electric field is used to induce current flow between the source and drain. This makes the FDC5614P_D87Z a versatile and reliable device for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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