FDC5661N-F085

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:	6-SSOT
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.6W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	763pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	19nC @ 10V
Series:	Automotive, AEC-Q101, PowerTrench®
Rds On (Max) @ Id, Vgs:	47 mOhm @ 4.3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	4.3A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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FDC5661N-F085 is a Field Effect Transistor (FET) with single drain. It is a component of a larger group of technologies known as Metal–Oxide–Semiconductor Field-effect Transistors (MOSFETs). A FET is a type of transistor that utilizes and varies the electric field in order to control current between source and drain. As an example, one component of an array of components that can be used to construct an amplifier.

The “F” in FDC5661N-F085 stands for Field Effect Transistor. The “DC” stands for Drain Current; the “5661N-F085” stands for the model of the transistor. The “5661N” is the specific manufacturer and the “F085” stands for the model number.

The FDC5661N-F085 is a low-cost, low-power semiconductor component specifically designed for use in consumer electronics and applications where low power draw is critical. This component is commonly used in consumer audio systems, including audio amplifiers, sound cards, laptops, and cell phones. It is also used in a wide array of automotive electronics applications, as well as computers, peripherals, and telecommunications equipment.

The FDC5661N-F085 is a N-channel MOSFET, which means that the device has a drain-source current that flows in a single direction. This current flow is controlled by an electrostatic field, which is created by a voltage applied between the gate and the source. The FDC5661N-F085 has an on resistance of 0.25 Ω when the gate-to-source voltage (VGS) is 20 volts and the drain-to-source voltage (VDS) is 20 volts. Its breakdown voltage is also 20 volts.

The FDC5661N-F085 has a very low on resistance and is therefore able to dissipate a considerable amount of power in a small package size. This makes it a great choice for high-power applications, such as the switching power supplies found in computers. Additionally, the FDC5661N-F085 has a very low gate threshold voltage, which means that the device can be easily switched from on to off, providing near instantaneous power control.

The FDC5661N-F085 is also well-suited for use in low voltage applications, such as those found in battery-powered electronics. It also has a very low thermal resistance and dissipates significantly less power than other semiconductor components, making it a great choice for reducing heat buildup in electronic systems.

Overall, the FDC5661N-F085 is an excellent choice for applications that require the highest levels of performance and reliability while operating in low-power conditions. It is suitable for a wide array of applications, providing near instantaneous power control while consuming minimal energy. The FDC5661N-F085 is a great choice for both high-power and low-voltage applications.

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