FDC855N

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FDC855N is a type of Field Effect Transistor (FET). It is a neat, little package with two pins, an anode and a gate, and it can handle up to 2.8A and 20V of electrical current. This FET is suitable for switching circuits, amplified output stages and other applications where low output resistance, fast switching times and high current capacity are important.

Anonymously branded FDC855N is a surface mounted N-Channel Enhancement Mode FET, typically used in high frequency power amplifier and switching circuits. These FETs have a high switching speed and low on-resistance. It is suitable for a wide range of applications, including professional audio, motor control, power supply and energy management. As they have an efficient packaging style, they do not require a heatsink but have good thermal dissipation.

When it comes to the working principle of FDC855N, it is quite simple. When an electric current is passed through the gate, it creates an electric field. This electric field interferes with the electrons in the FET’s body, generating a current in the FET’s drain. This drain current is then used to generate an even larger current in the FET’s load, which is the device or circuit being powered by the FET.

The FDC855N can be used for a variety of applications, depending on the design requirements. Examples of these applications include voltage regulation, audio amplification, current limiting, power transistors, small signal switching, and voltage amplifiers. It is also suitable for use in power supply and battery charging circuits, as well as motor and solenoid control. Thanks to its low resistance and fast switching time, it can also be used in high frequency power amplifiers.

In terms of operation, the FDC855N FET is quite easy to use. All you have to do is connect the gate and source pins to the appropriate voltage source. When the voltage on the gate pin is increased, the current flowing through the drain pin increases. Conversely, when the voltage is decreased, the current decreases.

In addition, the FDC855N FET also provides protection against reverse polarity. This is done by connecting a zener diode from the gate to the source of the FET. This zener diode will prevent any reverse voltage from entering the FET and will protect it from damage.

Overall, the FDC855N FET is a highly versatile device, capable of handling a wide range of applications, including power amplifiers and voltage regulation. Its low resistance, fast switching time and ease of use make it an ideal choice for many applications. If you’re looking for a reliable and versatile FET, the FDC855N may be just what you need.

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