FDC8878

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:	SuperSOT™-6
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.6W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1040pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	18nC @ 10V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	16 mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	8A (Ta), 8A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FDC8878 is an N-Channel enhancement mode MOSFET that is highly reliable, efficient, and offers a wide range of applications. It is mainly used as a switch to control current flow in applications ranging from switching, timing, to voltage regulation. FDC8878 is able to maintain its low power dissipation in both static and dynamic conditions, making it an ideal choice for switching and timing applications.FDC8878 is P-type metal–oxide–semiconductor field-effect transistor (MOSFET). It is a non-linear three-terminal electronic device primarily used for analog and digital switching and amplification purposes. The MOSFET is a voltage-controlled device, which simply means that the electrical current is proportional to the gate voltage. Unlike a normal transistor, the FDC8878 does not require a base current for amplification medium and has a low power requirement. The FDC8878 requires no voltage for static conditions and for a negligible noise and stability, it provides a very low threshold voltage. The FDC8878 is a linear N-channel MOSFET that consists of two MOSFETs connected in series, with their sources and drains connected together. The gate is connected to a source at the junction between the two MOSFETs.The working principle of the FDC8878 is simple. When the gate voltage exceeds the threshold voltage needed to turn the MOSFET on (VGS(th)), the MOSFET turns on and channels current between the source and the drain with very low power consumption. When VGS(th) is reached, a channel is created between the drain and the source allowing current to flow. The FDC8878 has numerous applications. Its low threshold voltage makes it ideal for low voltage applications such as those used in integrated circuits, digital logic, and power management systems. Its high efficiency for a two-transistor MOSFET makes it suitable for automotive, communications, and light-emitting diode (LED) applications. The combination of two MOSFETs in series provides an extra benefit of increased power isolation from the external circuit. Additionally, the FDC8878 can be utilized as an amplifier for audio applications.The FDC8878 is also proven to be an excellent choice for static applications such as static switches that require low power operation and high switching speed. As its threshold voltage is much lower than that of the P-channel MOSFET, the FDC8878 is often preferred as a cost-effective solution in applications like computers, solid state relays, TTL-compatible logic circuits, etc. In conclusion, the FDC8878 is an ideal MOSFET for low voltage and low power applications. It is a cost-effective component that offers unmatched reliability and performance for switching, timing, and voltage regulation. Its wide range of applications makes it an even more attractive choice for a variety of design applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description