FDC8886

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The FDC8886 is a high-voltage, high-temperature N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It is designed for a wide range of applications in the power management, audio and video, medical, telecom, and automotive industries. It has a wide voltage range, is capable of high currents, has fast switching speeds, and is immune to latch-up.

The FDC8886 is used in a variety of applications. It can be used as a switch in high voltage power supplies, as a power amplifier in radio frequencies and microwave systems, as an output stage in audio amplifiers, and as an electronic switch in industrial control systems.

The working principle of a transistor is a phenomenon called “field effect.” It occurs when electrons move through a solid-state material between two electrodes. The electrons form an electrical field that controls the flow of current between the two electrodes. MOSFETs, like the FDC8886, are designed to take advantage of this phenomenon. The FDC8886 is a MOSFET that uses an insulated gate electrode to control the flow of electrons between two terminals, the source and the drain. Applying a voltage to the gate electrode of the FDC8886 produces an electrical field. This field attracts the electrons from the source terminal to the drain terminal, allowing current to flow.

The FDC8886 has a maximum drain-source breakdown voltage of 650 volts, a maximum channel-to-source breakdown voltage of 50 volts, and a maximum operating temperature of 175° C. It also features an on-resistance of 15 milli-ohms, an avalanche capability of 20 volts, a body capacitance of 3 pF, and a channel capacitance of 350 pF. These features allow it to operate at high currents and high voltages, making it ideal for high voltage switching applications.

Due to its fast switching speeds, wide voltage range, high current capacity, and immunity to latch-up, the FDC8886 is an ideal solution for a variety of applications in the power management, audio and video, medical, telecom, and automotive industries. It is an excellent choice for those looking for a reliable, high-performing MOSFET.

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