FDD5670 Discrete Semiconductor Products |
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Allicdata Part #: | FDD5670TR-ND |
Manufacturer Part#: |
FDD5670 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 52A D-PAK |
More Detail: | N-Channel 60V 52A (Ta) 3.8W (Ta), 83W (Tc) Surface... |
DataSheet: | FDD5670 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2739pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 73nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 52A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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.The FDD5670 is a silicon N-channel Enhancement Mode Field-Effect Transistor (MOSFET). It is a versatile as well as cost-effective power regulating device that offers superior electrical performance ideal for the most demanding applications. The FDD5670 is typically used in the efficient conversion of electrical energy into mechanical energy in a wide range of power control applications.
Features
- High blocking voltage capability
- Integrated charge pump circuit
- Simple circuitry for enhanced ease-of-use
- High-gain operation
- High-power dissipation capability
Applications
- Power transistor arrays
- High-current switching applications
- Uninterruptible power supplies
- DC to DC converters
- Power distribution circuits
- Smart grid systems
- DC motor speed controls
- Switched-mode power supplies
Working Principle
The FDD5670 is a two-terminal power transistor device. It works on the principle of Non-Isolation Field-Effect Transistor (N-FET) technology. In this type of transistor device, one terminal is the drain and the other terminal is the source. The two terminals are the two essential elements that allow the FDD5670 to operate. In operation, the FDD5670 relies on a few key external components--a gate resistor, a gate capacitance and a gate voltage. In this way, the FDD5670 can achieve an extremely high level of efficiency due to its lowered bias current requirement.
The FDD5670 works by producing a vertical channel between the source and the drain that is produced by the application of an externally applied electric field. The presence of an external electric field effectively increases the electric charge on the gate of the transistor, which in turn increases the width of the channel allowing a conductive path of electrons to flow between the two terminals. The size of the conductive path and the number of electrons flowing through the channel vary according to the external electric field applied.
The charge pump circuit helps to increase the efficiency of the FDD5670 by providing a constant electrical input that maintains the width of the channel even when the external electric field drops or weakens. This ensures that the FDD5670 will remain an efficient controller of mechanical power even in fluctuating conditions. In addition, the charge pump circuit makes it easy to optimize the performance of the FDD5670 for a variety of applications.
Conclusion
The FDD5670 is an excellent choice for a variety of power control applications including power transistor arrays, DC to DC converters, power distribution circuits and DC motor speed controls. Its extremely high efficiency, low bias current requirement, and integrated charge pump circuit make it an ideal choice for efficient power conversion. With its high blocking voltage capability and simple circuitry, the FDD5670 is a cost-effective solution that is easy to use and offers superior electrical performance.
The specific data is subject to PDF, and the above content is for reference
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