FDD5670 Allicdata Electronics

FDD5670 Discrete Semiconductor Products

Allicdata Part #:

FDD5670TR-ND

Manufacturer Part#:

FDD5670

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 52A D-PAK
More Detail: N-Channel 60V 52A (Ta) 3.8W (Ta), 83W (Tc) Surface...
DataSheet: FDD5670 datasheetFDD5670 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2739pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 15 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDD5670 is a silicon N-channel Enhancement Mode Field-Effect Transistor (MOSFET). It is a versatile as well as cost-effective power regulating device that offers superior electrical performance ideal for the most demanding applications. The FDD5670 is typically used in the efficient conversion of electrical energy into mechanical energy in a wide range of power control applications.

Features

  • High blocking voltage capability
  • Integrated charge pump circuit
  • Simple circuitry for enhanced ease-of-use
  • High-gain operation
  • High-power dissipation capability

Applications

  • Power transistor arrays
  • High-current switching applications
  • Uninterruptible power supplies
  • DC to DC converters
  • Power distribution circuits
  • Smart grid systems
  • DC motor speed controls
  • Switched-mode power supplies

Working Principle

The FDD5670 is a two-terminal power transistor device. It works on the principle of Non-Isolation Field-Effect Transistor (N-FET) technology. In this type of transistor device, one terminal is the drain and the other terminal is the source. The two terminals are the two essential elements that allow the FDD5670 to operate. In operation, the FDD5670 relies on a few key external components--a gate resistor, a gate capacitance and a gate voltage. In this way, the FDD5670 can achieve an extremely high level of efficiency due to its lowered bias current requirement.

The FDD5670 works by producing a vertical channel between the source and the drain that is produced by the application of an externally applied electric field. The presence of an external electric field effectively increases the electric charge on the gate of the transistor, which in turn increases the width of the channel allowing a conductive path of electrons to flow between the two terminals. The size of the conductive path and the number of electrons flowing through the channel vary according to the external electric field applied.

The charge pump circuit helps to increase the efficiency of the FDD5670 by providing a constant electrical input that maintains the width of the channel even when the external electric field drops or weakens. This ensures that the FDD5670 will remain an efficient controller of mechanical power even in fluctuating conditions. In addition, the charge pump circuit makes it easy to optimize the performance of the FDD5670 for a variety of applications.

Conclusion

The FDD5670 is an excellent choice for a variety of power control applications including power transistor arrays, DC to DC converters, power distribution circuits and DC motor speed controls. Its extremely high efficiency, low bias current requirement, and integrated charge pump circuit make it an ideal choice for efficient power conversion. With its high blocking voltage capability and simple circuitry, the FDD5670 is a cost-effective solution that is easy to use and offers superior electrical performance.

The specific data is subject to PDF, and the above content is for reference

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