| Allicdata Part #: | FDD5N50UTF_WS-ND |
| Manufacturer Part#: |
FDD5N50UTF_WS |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 500V 3A DPAK |
| More Detail: | N-Channel 500V 3A (Tc) 40W (Tc) Surface Mount D-Pa... |
| DataSheet: | FDD5N50UTF_WS Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-Pak |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 40W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 650pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
| Series: | FRFET® |
| Rds On (Max) @ Id, Vgs: | 2 Ohm @ 1.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The FDD5N50UTF_WS is a type of slot-structure MOSFET, (metal-oxide–semiconductor field-effect transistor), which is a transistor used to switch electronic signals or power. The FDD5N50UTF_WS comes in a small, low-cost package, so it can be used in a variety of applications. This article will discuss the application field and working principle of the FDD5N50UTF_WS.
A MOSFET operates by applying an external electric field to the surface of a semiconductor, which causes a change in the conductivity of the material. The FDD5N50UTF_WS is a P-channel type MOSFET, meaning that the current flows from the source to the drain when a positive voltage is applied to the gate terminal. The source, gate, and drain are the three terminals of this type of transistor.
The FDD5N50UTF_WS has a number of advantages over other types of transistors. It is fast-switching, meaning that it can respond quickly to changes in signal levels, it is capable of handling high frequencies, and its relatively low gate voltage makes it suitable for use in portable devices.
The FDD5N50UTF_WS can be used in a variety of applications, including power management, power amplification, and DC–DC conversion. It is often used in mobile phone chargers, as it is capable of delivering high currents while maintaining a low power dissipation. The FDD5N50UTF_WS is also used in motor control applications, where it is able to switch large currents without significant power loss.
The FDD5N50UTF_WS is a popular choice for use as a power switch in consumer electronics, such as computers, tablets, and televisions. It is also used in audio amplifiers, where it can provide clean and distortion-free sound. The FDD5N50UTF_WS is also used in automotive and industrial applications.
The working principle of the FDD5N50UTF_WS is the same as that of any other MOSFET. When a voltage is applied to the gate, it creates an electric field on the surface of the semiconductor material. This electric field causes a change in the conductivity of the material, which in turn allows current to flow from the source to the drain. The voltage applied to the gate controls the amount of current that can flow from source to drain, allowing the FDD5N50UTF_WS to be used as a switch for controlling power.
In summary, the FDD5N50UTF_WS is a type of slot-structure MOSFET that is used in a variety of applications. It is fast-switching, capable of handling high frequencies, and can handle high currents with low power dissipation. The FDD5N50UTF_WS operates using the same principles as any other MOSFET, by using an electric field to control the amount of current that can flow from source to drain.
The specific data is subject to PDF, and the above content is for reference
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FDD5N50UTF_WS Datasheet/PDF