FDD5N50TM-WS Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	40W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	640pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	15nC @ 10V
Series:	UniFET™
Rds On (Max) @ Id, Vgs:	1.4 Ohm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	4A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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FDD5N50TM-WS Application Field and Working Principle

FDD5N50TM-WS are eFETs, or enhancement-mode field effect transistors, in the form of single MOSFETs. They are a type of transistor that is used in many different types of power control, switching and amplifying applications. They are used in amplifying and switching circuits as well as complex controlling applications. In order to better understand the FDD5N50TM-WS, it is important to first understand the basic principles of transistor operation and the main components of an FDD5N50TM-WS.

Components of a FDD5N50TM-WS

The FDD5N50TM-WS consists of three main components: source, drain, and gate. The source is the entrance for electrons, and it is connected to the negative terminal of the voltage source. The drain is the exit where the electrons leave the device and is connected to the positive terminal of the voltage source. The gate is the control terminal that forms a capacitive coupling with the source and the drain and is connected to the control voltage or input power.

Basic Principle of Operation

The basic principle of operation for the FDD5N50TM-WS is a form of electron transfer. Electrons are pulled from the source by the gate, and then forced towards the drain by the control voltage. This causes current to flow through the device, and the drain-source channel is then used as a switch. The gate capacitance of the FDD5N50TM-WS is used to control the flow of electrons by modulating the capacitance of the channel, allowing for more current to be pulled through or less current to be pulled, depending on the needs of the application.

FDD5N50TM-WS Applications

The FDD5N50TM-WS can be used in many different applications, such as switching applications, AC-DC converters, motor control, and power management. The FDD5N50TM-WS can also be used for amplification, as it has a high value of gain and low noise. It is also used for DC-DC converters, as it is capable of providing high currents at low voltages.

Conclusion

The FDD5N50TM-WS is a powerful device that can be used in a variety of applications. It is capable of providing high currents at low voltages, and it is suitable for a variety of applications including switching, amplifying, and motor control. The basic operation of this device can be explained by the principles of electron transfer, and the gate capacitance can be used to control the flow of electrons. The FDD5N50TM-WS is a useful and versatile transistor, and it can be used in a variety of different applications.

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