| Allicdata Part #: | FDN537NTR-ND |
| Manufacturer Part#: |
FDN537N |
| Price: | $ 0.15 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 30V 6.5A SSOT-3 |
| More Detail: | N-Channel 30V 6.5A (Ta), 6.5A (Tc) 1.5W (Ta) Surfa... |
| DataSheet: |  FDN537N Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.15000 |
| 10 +: | $ 0.14550 |
| 100 +: | $ 0.14250 |
| 1000 +: | $ 0.13950 |
| 10000 +: | $ 0.13500 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SuperSOT-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 465pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 8.4nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 23 mOhm @ 6.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6.5A (Ta), 6.5A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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Introduction
FDN537N is a two-stage N-MOSFET power amplifier. It is designed specifically for high-power applications, and is capable of providing up to 4A, 5V output power when using a 4 Ohm load. It is available in two configurations: high input and low input. The high input version has two stages, while the low input version is single-stage. This makes the FDN537N suitable for a variety of different applications.
Applications
The FDN537N can be used for a variety of different applications, such as:
- Power amplifiers and audio systems
- DC to DC converters
- Motor control
- Coil and inductor manufacture
- Switching power supplies
- Current amplification
- Instrumentation and measuring systems
Working Principle
The FDN537N is a two-stage N-MOSFET power amplifier. It consists of two power MOSFETs, each connected in series and operated in the common gate configuration. The input signal is applied to the gate of one of the transistors, and the gate of the other is connected to the drain of the first. When the gate voltage is increased, the current flowing through the device is also increased, resulting in an amplified output. The output voltage is then determined by the input voltage, the load impedance, and the gain of the circuit.
The FDN537N is designed to be used in a variety of different applications and is capable of providing a maximum output power of 5V and 4A. This makes it an ideal choice for applications that require a high power output, such as audio systems or high-voltage motors. The high input version has two stages, while the low input version is single-stage.
Conclusion
The FDN537N is a two-stage N-MOSFET power amplifier that is capable of providing up to 4A and 5V output power when using a 4-Ohm load. It is ideally suited for applications such as audio systems, motor control, switching power supplies and instrumentation. The high input version has two stages, while the low input version is single-stage. This makes the FDN537N an ideal choice for applications that require a high power output.
The specific data is subject to PDF, and the above content is for reference
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