FDN5632N-F085

The FDN 5632N-F085 is a single, N-channel Enhancement Mode Field Effect Transistor (FET) in a small and thin SOT-363 surface-mount package. These efficient, high-performance FETs are designed specifically for switching and amplifier applications in portable battery-powered equipment like cellular phones and personal digital assistants (PDAs). Field effect transistors (FETs) are three-terminal devices that are used to amplify or switch electrical signals. They are made of a thin layer of semiconductor material with one or more gates and a semiconductor substrate that determines the electrical response of the device.

The FDN 5632N-F085 has a drain to source voltage rating of -6V, a maximum drain current rating of 80mA, a maximum gate voltage rating of 6V and a maximum source current rating of 1mA. It offers fast switching times and low on-state resistance for minimal power dissipation and improved efficiency.

This FET also has good immunity from latch-up, a HEXFET power MOSFET technology. HEXFET is a type of power-switching FET technology with high voltage, low on-resistance, a wide range of gate voltage and temperature characteristics. The FDN 5632N-F085 also comes in a TSSOP-8 package, which is a small surface-mount package used to differentiate it from other transistor devices.

The FDN 5632N-F085 is designed for use in battery powered devices such as cellular phones and PDAs, where space is at a premium and power consumption must be kept to a minimum. Its low on-resistance, high voltage rating and small size make it ideal for these applications. The FET can be used in a variety of circuits and devices, including switches, amplifiers, audio amplifiers, level converters, switching regulators, motor speed controls and voltage-controlled oscillators (VCOs). Additionally, it can be integrated into high-density circuits where signal distribution and signal isolation are required. Since it has a low gate-to-source capacitance, it can also be used to increase the frequency bandwidth of signal transmission.

The FDN 5632N-F085 uses a number of operating principles to control its power handling and signal transmission characteristics. These principles are capacity coupling, junction capacitance, threshold voltage and transconductance. Capacity coupling is a principle that works by transmitting and isolating signals through capacitance. This FET has a high capacitance between its source and gate, allowing better signal transmission and isolation. Junction capacitance is used to control the amount of voltage drop and current flow that occurs between the source and drain. Threshold voltage is the voltage at which the FET begins to conduct current and affects the amount of current that is allowed to flow through the device. Finally, transconductance is the measure of the FET’s ability to amplify signals and is controlled by the amount of current flowing between the FET’s source and drain.

In conclusion, the FDN 5632N-F085 is a single, N-channel Enhancement Mode Field Effect Transistor (FET) that offers low on-state resistance, fast switching times, and low power operation ideal for use in battery-powered devices. Its HEXFET power MOSFET technology provides good immunity from latch-up. Additionally, its established operating principles allow for reliable signal transmission and amplification. The FDN 5632N-F085’s size, power handling and signal transmission characteristics make it an ideal component for a variety of applications and circuit designs.