| Allicdata Part #: | FDN5618P_G-ND |
| Manufacturer Part#: |
FDN5618P_G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | INTEGRATED CIRCUIT |
| More Detail: | P-Channel 60V 1.25A (Ta) 500mW (Ta) Surface Mount ... |
| DataSheet: |  FDN5618P_G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SuperSOT-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 500mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 430pF @ 30V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 13.8nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 170 mOhm @ 1.25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 1.25A (Ta) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Bulk |
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The FDN5618P_G is a P-channel Enhancement Mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It features both low on-resistance and low gate charge. The device consists of one P-channel Enhancement Mode MOSFET which controls the flow of current between the source and drain.
FDN5618P_G MOSFETs are used in a wide range of applications from simple switching to load switching to power management. They can be used in high power audio amplifiers, voltage regulators, and motor control circuits. They are also used in digital logic circuits and are well suited for high frequency operations.
The FDN5618P_G MOSFET has a drain-source voltage rating of 20 volts (Vds). The device has a maximum drain current rating of 12.5 amperes (Id). The gate-source voltage rating of this MOSFET is -2 to -12 volts (Vgs). The maximum power dissipation of the transistor is 160 watts (Pd). The transistor can operate at temperatures from -55 to +150 degrees celsius.
The FDN5618P_G MOSFETs can be used in many circuits due to their low on-resistance and high speed characteristics. It is well suited for high frequency switching applications such as in Class D audio amplifiers and power supplies. The device can also be used in motor control applications such as relay driving, regenerative braking and pulse-width modulation.
The working principle of FDN5618P_G MOSFETs is based on the concept of majority carrier channel formation. When a positive voltage is applied to the gate, a current channel is formed between source and drain. This current flow is controlled by the gate voltage, allowing the device to act as an amplifier or switch.
The FDN5618P_G MOSFET is available in through-hole or surface mount packages. The device is an enhancement-mode MOSFET and requires a negative gate-source voltage to turn on. The device is ideal for high frequency switching and is capable of switching at very high speeds.
The FDN5618P_G MOSFET is a versatile device which is suitable for a wide range of applications. The device can be used for both high frequency and low frequency switching applications. It is an ideal choice for audio amplifiers, voltage regulators, motor control circuits, relay driving, and pulse-width modulation.
The specific data is subject to PDF, and the above content is for reference
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