| Allicdata Part #: | FDP34N33-ND |
| Manufacturer Part#: |
FDP34N33 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 330V 34A TO-220 |
| More Detail: | N-Channel 330V Through Hole TO-220-3 |
| DataSheet: | FDP34N33 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 330V |
| Current - Continuous Drain (Id) @ 25°C: | -- |
| Rds On (Max) @ Id, Vgs: | -- |
| Vgs(th) (Max) @ Id: | -- |
| FET Feature: | -- |
| Power Dissipation (Max): | -- |
| Operating Temperature: | -- |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220-3 |
| Package / Case: | TO-220-3 |
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The FDP34N33 is a MOSFET (metal-oxide semiconductor field effect transistor) of the highest quality and reliability which is designed for a wide range of applications. This device is specifically designed to provide superior performance and reliability in industrial and consumer applications, such as consumer electronics and telecoms. It is also well suited for demanding automotive applications as well, such as switch and other power control applications.
MOSFETs are very different from ordinary transistors in their construction and operation. In a MOSFET, the flow of current from the source to the drain (the primary current flow) is controlled by the voltage applied to the gate electrode, whereas the current flow in an ordinary transistor is controlled by the voltage applied to the base and emitter. Additionally, MOSFETs can be designed to be either Enhancement Transistor (E-MOSFET) or Depletion Transistor (D-MOSFET). The FDP34N33 is of the E-MOSFET type. Each of these types of devices has unique characteristics and can be better suited for particular applications.
The FDP34N33 has a number of features which add to its versatility. It has a breakdown voltage of 34V and can accept up to 1A at high drain voltages. It also has an extremely low “on-resistance” of 0.35 ohms and can accept logic level signals in the range of 1V to 5V. This makes the FDP34N33 suitable for high-frequency switching applications and low-power switching functions.
The basic working principle of all MOSFETs is the same. A MOSFET is essentially a sealed, insulated gate within a channel of conducting material. The electrical channel is held at a potential lower than that of the gate voltage. When a voltage is applied to the gate, it causes the electrons in the channel to be scattered, allowing current to pass through the channel. The greater the voltage applied to the gate, the greater the current passing through the channel. The electrons in the channel can be scattered by different gate voltages; this determines whether or not the device is in an “on” or “off” state.
The FDP34N33 can be used in wide variety of applications. It is well suited for aiding the control of high-current signals in many industrial, automotive, and consumer devices. It can also be used for power switching applications in high current, high voltage devices. The low voltage and high current handling of the device make it well suited for a wide range of applications. The FDP34N33 is an ideal choice for automotive and industrial applications due to its impressive performance, reliability and cost effectiveness.
The specific data is subject to PDF, and the above content is for reference
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FDP34N33 Datasheet/PDF