FDP3672

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	135W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1670pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	37nC @ 10V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	33 mOhm @ 41A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	5.9A (Ta), 41A (Tc)
Drain to Source Voltage (Vdss):	105V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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FDP3672 is a N-channel enhancement mode MOSFET developed by the Fairchild Semiconductor, which is manufactured using their advanced PowerTrench process. It has a much higher On-state resistance than other similar transistors and is one of the latest advanced transistor families. The FDP3672 combines a number of features that make it ideal for use in applications such as motor control, switching, power management, and consumer electronics. This article aims to explore the application fields and working principle of the FDP3672.Applications of FDP3672The FDP3672 is widely used in a wide range of applications due to its low on-state resistance, excellent body diode characteristics, and low gate-to-drain capacitance. It is an ideal choice for motor control, switching and battery management applications. In motor control applications, the FDP3672’s low on-state resistance allows for lower motor power losses compared to other transistors. The excellent body diode characteristics of the FDP3672 also allow it to switch quickly and accurately, making it an ideal choice for switching applications. The FDP3672 is also ideal for use in battery management applications. Its low on-state resistance helps to preserve battery life and reduce power dissipation, making it a reliable choice for these applications. Additionally, the low gate-to-drain capacitance of the FDP3672 allows for faster switching times, which is essential for battery management applications.Another application for the FDP3672 is power management. Its low on-state resistance and excellent body diode characteristics allow for efficient power conversion and switching, making it an ideal component for power management applications. The FDP3672 is also well suited for use in consumer electronics due to its high current capacity and low voltage drop. The high current capacity of the FDP3672 makes it an effective component for controlling current and voltage levels in these devices. Working Principle of FDP3672The FDP3672 is an N-channel enhancement mode MOSFET, meaning it requires a low gate-source voltage to turn the transistor on. When a low gate-source voltage is applied, the current flows freely through the channel and establishes an On-state.When the gate-source voltage is removed, the FDP3672 reverts back to its Off-state. This is because the absence of the gate-source voltage causes the N-type channel to become depleted and prevents the current flow.In addition to its low On-state resistance and excellent body diode characteristics, the FDP3672 also has a low gate-to-drain capacitance. This low capacitance helps to reduce the effect of noise and parasitic oscillations on the circuit and allows for faster switching times.ConclusionThe FDP3672 is an N-channel enhancement mode MOSFET developed by the Fairchild Semiconductor, which is manufactured using their advanced PowerTrench process. It is ideal for use in a variety of applications such as motor control, switching, power management, and consumer electronics due to its low on-state resistance, high current capacity, and low gate-to-drain capacitance. The FDP3672 requires a low gate-source voltage to turn it on and reverts back to its Off-state when the gate-source voltage is removed. Its low gate-to-drain capacitance also helps to reduce the effect of noise and parasitic oscillations on the circuit and allows for faster switching times.

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