| Allicdata Part #: | FDP3682-ND |
| Manufacturer Part#: |
FDP3682 |
| Price: | $ 1.39 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 100V 32A TO-220AB |
| More Detail: | N-Channel 100V 6A (Ta), 32A (Tc) 95W (Tc) Through ... |
| DataSheet: |  FDP3682 Datasheet/PDF |
| Quantity: | 839 |
| 1 +: | $ 1.39000 |
| 10 +: | $ 1.34830 |
| 100 +: | $ 1.32050 |
| 1000 +: | $ 1.29270 |
| 10000 +: | $ 1.25100 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 95W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1250pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 36 mOhm @ 32A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Ta), 32A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The FDP3682 is a Wide Band N-Channel MOSFET which can be used in a variety of applications. It is a single device, meaning that it does not require a gate driver or a gate isolator to be used. This makes it very suitable for industrial, automotive and telecommunication applications, as well as being used in audio circuits and gadgets.
The FDP3682 is a high-speed switching device, which makes it perfect for applications which require fast switching on and off. It also has a low gate input capacitance and low output capacitance, meaning that switching is much faster than with traditional MOSFETs. This makes it suitable for applications where speed and power efficiency are a key factor, such as in telecommunications and switching power supplies.
It offers a high input impedance and low output impedance, making it suitable for high-side and low-side control applications. It also has a wide temperature range and is suitable for high-temperature applications, making it suitable for a range of industrial and automotive applications. Additionally, it has low gate leakage current, meaning that it is suitable for use as a power switch, especially in low-power applications.
Another great benefit of the FDP3682 is its large drain-source breakdown voltage (VDSS) of 68V, making it suitable for applications which require high voltages such as those found in automotive and telecommunications systems. This makes it ideal for use in power supplies, inverters and other applications which require high voltages. It also has a low on-resistance of only 28 mΩ, ensuring that it is suitable for use in high-current circuits.
The working principle of the FDP3682 is relatively simple. When a positive voltage is applied to the gate of the MOSFET, a current is induced in the drain-source channel, inversely proportional to the resistance between the source and drain. This current is known as the “gate-source current” and when it is increased or decreased, it causes the MOSFET to switch on or off respectively. As such, it can be used to switch on and off a variety of electronic devices. The FDP3682 MOSFET is a versatile component and can be used in many applications.
In conclusion, the FDP3682 is a wide-band N-Channel MOSFET which is suitable for a variety of applications, including industrial, automotive and telecommunications systems. It offers a high input impedance and low output impedance, making it suitable for high-side and low-side control applications. Moreover, it has a wide temperature range and is suitable for high-temperature applications, making it suitable for a range of industrial and automotive applications. Finally, the working principle of the FDP3682 is relatively simple, and it can be used to switch on and off a variety of electronic devices.
The specific data is subject to PDF, and the above content is for reference
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