Allicdata Part #: | FDS9933-ND |
Manufacturer Part#: |
FDS9933 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2P-CH 20V 5A 8SOIC |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 5A 900mW Surfa... |
DataSheet: | FDS9933 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 5A |
Rds On (Max) @ Id, Vgs: | 55 mOhm @ 3.2A, 4.5V |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 825pF @ 10V |
Power - Max: | 900mW |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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FDS9933 is a n-channel dual-gate MOSFET array that is designed for high-speed operation and low on-state resistance. It is typically used for switching, analog, and digital control applications.
The FDS9933 is a dual-gate MOSFET array that is manufactured using NXP Semiconductor’s high-voltage BiCMOS process. This process combines both BiCMOS and CMOS technologies and provides the device with a combination of high switching speed, low on-state resistance, and low power dissipation. This combination of features makes the FDS9933 ideal for a variety of switching, analog, and digital control applications.The FDS9933 features two high-performance dual-gate MOSFETs in a single package, providing an easy and cost-effective solution for applications requiring two MOSFETs. It also features a low on-state resistance of just 98Ω, which allows it to switch at high speeds with minimal power loss. The FDS9933 is available in several packages, including SOT-23, SOIC-8, and DIP-8, making it suitable for a wide range of applications.
In order for the FDS9933 to function properly, a bias voltage must be applied to the gates of the MOSFETs. This is usually done by connecting a voltage source to the gates, which will then bias the MOSFETs into conduction. When the bias voltage is applied, the MOSFETs will be in conducting mode, allowing current to flow between the source and the drain.In addition, the FDS9933 features two gate pins, which can be used to control the device’s state. By attaching a logic-level input signal to the gates, they can be used to control the conduction state of the MOSFETs. This allows the FDS9933 to be used in switching and digital control applications, allowing it to accept logic-level inputs and switch the MOSFETs according to the logic-level input signals.
Finally, the FDS9933 features two outputs, which allow it to be used in analog and digital control applications. By connecting the outputs to an analog circuit, such as an op-amp, the FDS9933 can be used to control an analog voltage or current. Similarly, the FDS9933 can also be used in digital control applications, such as in feedback circuits or in logic-level outputs. This makes the FDS9933 a versatile device, allowing it to be used in a wide variety of applications.
In conclusion, the FDS9933 is a highly versatile device that can be used in a wide variety of switching, analog, and digital control applications. It features two high-performance dual-gate MOSFETs in a single package, as well as low on-state resistance and two gate pins for controlling the device’s state. It also features two outputs, which can be used for analog or digital control applications. Finally, the FDS9933 is available in several different packages, making it a suitable choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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