FDS9958-F085

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The FDS9958-F085 is part of a range of transistors, often referred to as Field Effect Transistors or FETs, which are specifically known as Metal-Oxide-Semiconductor Field-Effect Transistors or MOSFETs for short. This particular type is an array of MOSFETs in a single package and has been designed to provide current and voltage output across a wide range of applications.

A FET is a three-terminal device consisting of a semiconductor body and two or more electrodes. The semiconductor body comprises either a silicon or aluminum semiconductor material, which is then doped with one type of material on either side. When both of the electrodes are connected to a voltage source, a small current flows through the semiconductor body. The current through the body is then used to create a voltage between the two electrodes, which can then be used to control various loads.

When it comes to FDS9958-F085, it is an array of four MOSFETs in a single package with a single gate, drain and source. This allows the device to both provide a higher current output than a single MOSFET, whilst also providing a lower on-resistance due to the larger number of channels.

The FDS9958-F085 can provide an extremely robust output when compared to other forms of semiconductor devices. Its ability to withstand high voltages and provide an output of up to 80A allows it to be used in applications such as high current switching power supplies and motor control applications.

The device itself works on a principal known as avalanche breakdown. What this means is that when the voltage applied between the drain and source exceeds the normal operating voltage, a large amount of current will flow through the channel, due to the formation of electron-hole pairs. This current is then used to create a high voltage between the two terminals and thus provide a current output. This allows the FDS9958-F085 to operate across a wide range of voltage and current conditions, making it ideal for applications requiring high switching dynamics.

The FDS9958-F085 also has the advantage of being able to reduce switching losses, which can arise from high switching current transitions. This is done by featuring a low voltage turn-on (Vth), which is a measure of the device\'s efficiency when operating at high switching frequencies. The low Vth ensures low power loss due to heat, allowing the device to efficiently convert electrical energy into mechanical energy.

Overall, the FDS9958-F085 is an excellent choice for applications involving high voltage and current handling. Its ability to dissipate heat efficiently, reduce switching losses and provide an output current of up to 80A make it ideal for a wide variety of applications. It is also extremely robust, making it perfect for use in hostile environments. With its range of features and benefits, the FDS9958-F085 is one of the most reliable and versatile MOSFETs available and is sure to become even more prominent in the near future.

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