FDS9412 Allicdata Electronics
Allicdata Part #:

FDS9412-ND

Manufacturer Part#:

FDS9412

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 7.9A 8SOIC
More Detail: N-Channel 30V 7.9A (Ta) 2.5W (Ta) Surface Mount 8-...
DataSheet: FDS9412 datasheetFDS9412 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The FDS9412 MOSFET is a single power MOSFET widely used for a variety of electronic applications. It is a device that can be used in both analog and digital circuits, but the most common applications are those which involve high frequency switching, such as pulse-width modulation, frequency division, and amplitude modulation. The FDS9412 comes in a TO-220 package, which is a widely used package for power circuits.

The FDS9412 is a type of Field Effect Transistor (FET). It is also a great deal smaller than a regular Bipolar Junction Transistor (BJT). This small size and power output make it an ideal switch for many electronic applications. The FET works by creating a voltage dependent channel between the source and drain. This channel is created by applying an electric field to the gate of the transistor.

The FDS9412 has a very low "on" resistance, meaning that when the electric field is applied, a very large current flows through the drain and source. The resistor on the drain and source of the MOSFET determine the value of the current, and the resistor on the gate determines the flow of current through the electric field. This low resistance, along with the small size, makes the FDS9412 ideal for applications that require high current flow, and also helps to reduce power consumption and heat dissipation.

The FDS9412 can be used in a variety of applications, including motor control, audio amplifiers, switching and pulse width modulation circuits, and high frequency switching. It is also commonly used in DC-DC converters, power supplies, motor drivers, and switching power supplies. The FDS9412 is also used for RF switching in systems such as Wi-Fi and cellular networks. One of the most common applications for the FDS9412 is in RF (radio frequency) switching, such as in cellular base stations.

The working principle of the FDS9412 MOSFET is based on its operating mode. The device is in a triode mode when the gate voltage is applied. This mode is created by adding a positive voltage to the gate, which creates a depletion region in the channel of the FET. In triode mode, a large current flows between the source and drain, and this current flows through the depletion region. In addition, the FDS9412 can also operate in a saturated mode, in which the gate voltage is increased to create a larger depletion region and thus increase the current flow.

The FDS9412 MOSFET is a versatile and powerful device, and is widely used in a variety of electronic applications. It is capable of switching high frequency signals and providing high current flow, making it the perfect choice for applications such as motor control, switching and pulse width modulation circuits, and RF switching. Additionally, its low "on" resistance and small size help to reduce power consumption and heat dissipation, making it an ideal solution for energy efficient applications.

The specific data is subject to PDF, and the above content is for reference

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