FDS9431A

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FDS9431A is a P-Channel Enhancement-Mode Power MOSFET designed for applications where low on-resistance and fast switching speed are required. Its small size, fast switching speed and low on-resistance make it suitable for a wide variety of applications, including power switches, power converters, power supply regulators and logic levels. The FDS9431A is designed to be used with a logic level MOSFET driver, such as the TD6605, in order to maximize switching speed and efficiency.

Application fields

The FDS9431A is a P-Channel MOSFET, which is ideal for switching power at high frequencies and powers. Due to its low on-resistance and high switching speed, it is suitable for use in applications such as switching power supply, motor control, linear regulators, power conversion and H-bridge motor control. It can also be used as a logic level switch, where fast switching speeds and low on-resistance are required.

The FDS9431A is designed to be used with a logic level MOSFET driver. This combination provides the fast switching speed and low on-resistance required for the most demanding switching applications. It can also be used with a digital logic level drive, such as the TD6605, which provides the additional capabilities of voltage controlled switching, thermal shutdown and over current protection.

Working Principle

The FDS9431A is an enhancement-mode MOSFET. When the voltage across the Gate and Source is less than the threshold voltage, V th, the MOSFET will be in the off state. As the gate voltage is increased, the channel between gate and source is increased and the drain current is increased. The drain current is limited by the channel resistance, R DS(on) (the resistance between drain and source when the MOSFET is in its on state). The current is limited to I D = V GS-V th /R DS(on), where V GS is the voltage difference between the gate and source.

When the gate voltage is greater than the threshold voltage, the MOSFET is “on”. When the gate voltage is 0 or less, the MOSFET is “off”. The Gate to Source voltage must be greater than the threshold voltage in order for the MOSFET to turn “on”.

The FDS9431A also has an integrated N-channel enhancement-mode body diode, which allows current to flow from drain to source when the voltage across the MOSFET is reversed. This diode provides protection against reverse voltages, and allows the use of the FDS9431A as a power switch in applications such as H-bridge motor control.

The FDS9431A is capable of high switching speeds and low R DS(on), making it suitable for use in power switching, power conversion and motor control applications. Its low on-resistance and integrated body-diode make it ideal for switching power at high frequencies and powers, such as in switching power supplies and H-bridge motor control.

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