FDS9435A Allicdata Electronics
Allicdata Part #:

FDS9435ATR-ND

Manufacturer Part#:

FDS9435A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 30V 5.3A 8-SOIC
More Detail: P-Channel 30V 5.3A (Ta) 2.5W (Ta) Surface Mount 8-...
DataSheet: FDS9435A datasheetFDS9435A Datasheet/PDF
Quantity: 15000
Stock 15000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 528pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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FDS9435A is an advanced single FET transistor that is widely used for various power applications. It is ideal for controlling current and voltage, providing low resistance and high breakdown voltage for low voltage and power applications. The FDS9435A is widely used in industries such as automotive, defense and aerospace, computing, consumer electronics and telecom.

The FDS9435A transistor is a four-pin FET device, with the drain and gate connected in series, and the source connected to ground. It is a symmetrical device, meaning it can be oriented either as an enhancement mode or depletion mode FET. This means that it can be used in either an analog or digital power applications.

The main advantage of the FDS9435A transistor is its ability to dissipate large amounts of power while maintaining a low on-state voltage. This makes it an effective choice for high-power switching applications, as it can provide a low voltage drop to the load when it is in the off-state. Additionally, the FDS9435A transistor is typically used when large currents need to be switched with precision.

The working principle of the FDS9435A transistor is similar to that of other FETs. When a bias voltage is applied to the gate of the FDS9435A, the drain and gate will be current-controlled, meaning that they will act as a variable resistor. The voltage drop across the variable resistor is determined by the gate bias and the drain current. Thus, the drain current will vary based on the gate bias, allowing it to be used in a wide range of circuit designs.

In addition to the FDS9435A transistor, there are several other similar devices that are used in the same applications. These include the FSDM023A and FSDM025A DMS FET transistors, which both feature a four-pin configuration and allow for low-power switching with high accuracy. There is also the FSDM072A and FSDM071A DMS FETs, which are suitable for high voltage and power applications, as well as the FSDM093A and FSDM094A DMS FETs for ultra-high-voltage applications. Finally, there is the FSDM099A and FSDM100A DMS FETs, which are capable of providing low-voltage and low-power switching with high accuracy.

Overall, the FDS9435A transistor is an excellent choice for power applications. It is versatile due to its symmetrical design, allowing it to be used as either an enhancement or depletion mode FET, and it can handle large currents and high-power switching applications with ease. Furthermore, the FDS9435A transistor is very reliable and easy to use, and its low on-state voltage makes it a great choice for high power applications.

The specific data is subject to PDF, and the above content is for reference

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