Allicdata Part #: | FDU6030BL-ND |
Manufacturer Part#: |
FDU6030BL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 10A I-PAK |
More Detail: | N-Channel 30V 10A (Ta), 42A (Tc) 3.8W (Ta), 50W (T... |
DataSheet: | FDU6030BL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | IPAK (TO-251) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1143pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta), 42A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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Single Field-Effect Transistors (FETs) are one of the most popular types of transistors and are widely used in various electronic circuits. The FDU6030BL is a type of single FET that is designed to operate in applications where high input impedance is required. In addition to having high input impedance, the FDU6030BL also offers high switching speed and low on-resistance values.
A single FET is a type of transistor that is made up of two components – the gate and the source. The gate, which is typically a thin layer of metal oxide, is the input to the FET. The source is the output from the FET and is typically made from either a channel of semiconducting material or a thin layer of metal oxide. The gate and the source are connected to each other through an electric field, which is created by applying an electrical voltage to the gate.
The purpose of the FDU6030BL is to provide high input impedance and fast switching speeds. This is accomplished by combining the gate and the source in a special way. The source is formed by connecting the source to the gate and then connecting the source to either a source resistance or a source electrode. The source electrode is used to increase the input impedance of the transistor, while the source resistance is used to reduce the switching speed of the transistor.
In addition to providing high input impedance and fast switching speeds, the FDU6030BL also has very low on-resistance values. This is because the gate and source are connected in a special way that allows the current to flow easily through the source electrode. This increases the source-gate resistance, which in turn reduces the resistance at the output.
The FDU6030BL can be used in a variety of applications, including radio frequency circuits and power management circuits. When used in a radio frequency circuit, the FDU6030BL can provide high input impedance, fast switching speeds and low on-resistance values for narrows manner applications. The transistor can also be used in power management circuits, where its low on-resistance values make it suitable for controlling large currents.
In conclusion, the FDU6030BL is a type of single FET that is designed to operate in applications where high input impedance is required. It has the advantage of providing high input impedance and fast switching speeds, while also offering very low on-resistance values. The FDU6030BL can be used in a variety of applications, including radio frequency circuits and power management circuits. As such, it is an ideal choice for a wide range of circuit designs.
The specific data is subject to PDF, and the above content is for reference
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