FDU6612A

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The FDU6612A is a monolithic power field effect transistor (FET) that is designed for use in audio frequency switching applications. This device is constructed with an n-channel enhancement mode vertical double-diffused structure with a substrate enhancement layer. It provides low on-resistance, fast switching speed, low input capacitance and low reverse transfer capacitance.

The device has an extremely low input-capacitance and high-voltage capability. It is capable of operating at up to 100V, making it suitable for high voltage switching applications. It is available in small SOT-875J package that provides an ease of layout, power density, and reliability. The silicon oxide gate oxide used in the device provides excellent off-state characteristics and very low leakage current.

The FDU6612A can be used in a wide range of application including power audio amplifiers, DC-DC converters, radio receivers and audio switching. It is especially useful for applications that require a fast switching speed, low-power consumption, high-reliability and high flexibility.

The FDU6612A has many benefits for applications. Some of these benefits include low gate charge, low on-resistance, low input capacitance, high magnitude breakdown voltage, and low ID. Additionally, it has a low input-capacitance, which helps reduce the total switching losses in power audio applications, and its low input capacitance allows for higher gains and overall better circuit performance.

The FDU6612A power FET works by using a voltage applied to the gate, which causes channel formation in the channel region and subsequently current flow, depending on the amount of voltage applied. When less voltage is applied, the channel region decreases in size and fewer electrons flow. As more voltage is applied, a larger channel region is formed, and more electrons can flow, increasing the current.

The device offers excellent switching performance and current capability, which allows for high power ratings and high efficiency. This is due to its low on-resistance, high p-channel magnitudes, and low input capacitance. Furthermore, the FDU6612A features low gate charge, which reduces switching losses, making it an ideal choice for high frequency applications.

Overall, the FDU6612A offers many benefits for applications that require switching the audio frequencies and reduces overall power consumption. It is an excellent choice due to its low input capacitance, fast switching speed, low on-resistance, and low reverse transfer capacitance. Additionally, its ability to operate at up to 100V makes it suitable for high voltage switching applications.

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