Allicdata Part #: | FDU6296-ND |
Manufacturer Part#: |
FDU6296 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 15A I-PAK |
More Detail: | N-Channel 30V 15A (Ta), 50A (Tc) 3.8W (Ta), 52W (T... |
DataSheet: | FDU6296 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | IPAK (TO-251) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 52W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1440pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 31.5nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 8.8 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Ta), 50A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDU6296 is a high-voltage, silicon-gate MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) developed by Fairchild Semiconductor. It is a high-power FET (Field-Effect Transistor) device that can be used in a variety of applications, from power control and amplification to signal switching, depending on the needs of the particular system. The FDU6296 is a p-channel enhancement mode MOSFET, meaning it is turned on when a positive voltage is applied to its gate.
The FDU6296 is a transistor that works using a principle known as "field-effect". In a MOSFET, a voltage is applied to the gate which creates an electric field, which in turn affects the conductivity of a semiconductor channel between the drain (D) and source (S) electrodes. The FDU6296 has a rated gate-to-source voltage of 20V and a peak gate-to-source voltage of 28V. The Gate-to-Source voltage controls the current flow through the semiconductor channel. The FDU6296 has an RDS (on) rating of 0.144 ohm maximum, with a continuous drain current of 100 amps, and a pulse drain current of 650A. It has an on-state drain-source voltage (Vds) of 60V.
The FDU6296 has a wide range of applications, such as power management, high-side switches, power converters, motor control, audio amplification, and illumination. The device is ideal for applications that require efficient, high-power operation, such as motor control and high-power switching systems. The device is often used in automotive, audio, and industrial systems, as it can handle a wide range of voltages and currents.
The FDU6296 offers a number of advantages over other devices. It has a low on-state resistance (RDS (on)) for increased efficiency, and it has a high maximum drain-source voltage (Vds) for improved protection against voltage spikes. The device also features a wide Gate-to-Source voltage (Vgs) range, so it is suitable for systems that require a variety of input voltages. The device\'s low on-state resistance (RDS(on)) reduces switching time, allowing for faster performance. The device also has high-current capacities, so it can handle higher power applications. Additionally, the device has low input capacitance, which minimizes power loss.
Overall, the FDU6296 is a high-performance MOSFET ideal for a variety of power control, switching, and audio application needs. It has a wide range of features and benefits, such as low on-state resistance, high current capacity, low input capacitance, and a wide Gate-to-Source voltage range. The device can provide efficient operation with protection against voltage spikes, making it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FDU6676AS | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 90A IPAKN... |
FDU6680 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 12A IPAKN... |
FDU6512A | ON Semicondu... | -- | 1000 | MOSFET N-CH 20V 10.7A I-P... |
FDU6612A | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 9.5A I-PA... |
FDU6688 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 84A I-PAK... |
FDU6030BL | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 30V 10A I-PAK... |
FDU6296 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 15A I-PAK... |
FDU6N25 | ON Semicondu... | -- | 1000 | MOSFET N-CH 250V 4.4A IPA... |
FDU6N50TU | ON Semicondu... | -- | 5008 | MOSFET N-CH 500V 6A IPAKN... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...