FDU6296 Allicdata Electronics
Allicdata Part #:

FDU6296-ND

Manufacturer Part#:

FDU6296

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 15A I-PAK
More Detail: N-Channel 30V 15A (Ta), 50A (Tc) 3.8W (Ta), 52W (T...
DataSheet: FDU6296 datasheetFDU6296 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: IPAK (TO-251)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 31.5nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FDU6296 is a high-voltage, silicon-gate MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) developed by Fairchild Semiconductor. It is a high-power FET (Field-Effect Transistor) device that can be used in a variety of applications, from power control and amplification to signal switching, depending on the needs of the particular system. The FDU6296 is a p-channel enhancement mode MOSFET, meaning it is turned on when a positive voltage is applied to its gate.

The FDU6296 is a transistor that works using a principle known as "field-effect". In a MOSFET, a voltage is applied to the gate which creates an electric field, which in turn affects the conductivity of a semiconductor channel between the drain (D) and source (S) electrodes. The FDU6296 has a rated gate-to-source voltage of 20V and a peak gate-to-source voltage of 28V. The Gate-to-Source voltage controls the current flow through the semiconductor channel. The FDU6296 has an RDS (on) rating of 0.144 ohm maximum, with a continuous drain current of 100 amps, and a pulse drain current of 650A. It has an on-state drain-source voltage (Vds) of 60V.

The FDU6296 has a wide range of applications, such as power management, high-side switches, power converters, motor control, audio amplification, and illumination. The device is ideal for applications that require efficient, high-power operation, such as motor control and high-power switching systems. The device is often used in automotive, audio, and industrial systems, as it can handle a wide range of voltages and currents.

The FDU6296 offers a number of advantages over other devices. It has a low on-state resistance (RDS (on)) for increased efficiency, and it has a high maximum drain-source voltage (Vds) for improved protection against voltage spikes. The device also features a wide Gate-to-Source voltage (Vgs) range, so it is suitable for systems that require a variety of input voltages. The device\'s low on-state resistance (RDS(on)) reduces switching time, allowing for faster performance. The device also has high-current capacities, so it can handle higher power applications. Additionally, the device has low input capacitance, which minimizes power loss.

Overall, the FDU6296 is a high-performance MOSFET ideal for a variety of power control, switching, and audio application needs. It has a wide range of features and benefits, such as low on-state resistance, high current capacity, low input capacitance, and a wide Gate-to-Source voltage range. The device can provide efficient operation with protection against voltage spikes, making it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "FDU6" Included word is 9
Part Number Manufacturer Price Quantity Description
FDU6676AS ON Semicondu... -- 1000 MOSFET N-CH 30V 90A IPAKN...
FDU6680 ON Semicondu... -- 1000 MOSFET N-CH 30V 12A IPAKN...
FDU6512A ON Semicondu... -- 1000 MOSFET N-CH 20V 10.7A I-P...
FDU6612A ON Semicondu... -- 1000 MOSFET N-CH 30V 9.5A I-PA...
FDU6688 ON Semicondu... -- 1000 MOSFET N-CH 30V 84A I-PAK...
FDU6030BL ON Semicondu... 0.0 $ 1000 MOSFET N-CH 30V 10A I-PAK...
FDU6296 ON Semicondu... -- 1000 MOSFET N-CH 30V 15A I-PAK...
FDU6N25 ON Semicondu... -- 1000 MOSFET N-CH 250V 4.4A IPA...
FDU6N50TU ON Semicondu... -- 5008 MOSFET N-CH 500V 6A IPAKN...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics