FF200R06KE3HOSA1 Allicdata Electronics
Allicdata Part #:

FF200R06KE3HOSA1-ND

Manufacturer Part#:

FF200R06KE3HOSA1

Price: $ 63.95
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE 600V 200A
More Detail: IGBT Module Trench Field Stop Half Bridge 600V 260...
DataSheet: FF200R06KE3HOSA1 datasheetFF200R06KE3HOSA1 Datasheet/PDF
Quantity: 50
1 +: $ 58.13640
10 +: $ 55.13510
Stock 50Can Ship Immediately
$ 63.95
Specifications
Series: C
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 260A
Power - Max: 680W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
Current - Collector Cutoff (Max): 5mA
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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Transistors – IGBTs – Modules

FF200R06KE3HOSA1 Application Field and Working Principle

Insulated Gate Bipolar Transistors (IGBTs) are semiconductor devices used to amplify or switch electrical signals and power. One of the most popular types of IGBTs is the FF200R06KE3HOSA1, an advanced type of module with a wide range of applications and features. This article will discuss the application field and working principle of the FF200R06KE3HOSA1 module.

The FF200R06KE3HOSA1 module is mainly used in motor control and switching applications. It is suitable for inverter motor control, UPS systems, robotic systems, isolated DC-DC converters, renewable energy systems such as wind and solar power, as well as other applications that require precision. This module is capable of high-speed switching and is extremely safe to use in high-voltage systems, making it a reliable choice for many applications.

The device comprises of two MOSFETs and one IGBT integrated into a single module. The MOSFETs provide the control for the IGBT, allowing for higher frequency switching and a greater control over the current. The IGBT provides the power switching capabilities, allowing for high power to be switched in a safe manner. The device also features an integrated freewheeling diode, which protects the device from reverse voltages.

The module works by using two MOSFETs that generate a gate-voltage to control the current of the IGBT. When the gate-voltage exceeds a certain threshold, the IGBT is turned on and current starts to flow. This current can then be controlled with the gate-voltage and the MOSFETs. When the gate-voltage drops below the threshold, the current stops flowing, turning the device off.

The FF200R06KE3HOSA1 module offers high-speed switching capabilities, which makes it suitable for motor control and other high-frequency applications. The device also provides high safety, as the integrated freewheeling diode ensures it is protected from reverse voltage. The module is also more cost effective than discrete MOSFETs and IGBTs, as the cost of the components is significantly reduced when they are integrated in a single module.

In conclusion, the FF200R06KE3HOSA1 module is an advanced type of IGBT module which is suitable for motor control, switching applications, and other high-power applications. It offers high safety, as the integrated freewheeling diode protects the device from reverse voltages. The device also provides high-speed switching and is more cost-effective than discrete MOSFETs and IGBTs.

The specific data is subject to PDF, and the above content is for reference

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