Allicdata Part #: | FF200R17KE3HOSA1-ND |
Manufacturer Part#: |
FF200R17KE3HOSA1 |
Price: | $ 96.80 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE 1700V 200A |
More Detail: | IGBT Module Trench Field Stop Half Bridge 1700V 31... |
DataSheet: | FF200R17KE3HOSA1 Datasheet/PDF |
Quantity: | 100 |
1 +: | $ 88.00470 |
Series: | C |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Current - Collector (Ic) (Max): | 310A |
Power - Max: | 1250W |
Vce(on) (Max) @ Vge, Ic: | 2.45V @ 15V, 200A |
Current - Collector Cutoff (Max): | 3mA |
Input Capacitance (Cies) @ Vce: | 18nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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Transistors have long been a cornerstone of electronic circuits, and in recent years, they have been on the rise. From audio applications to complex power supplies, transistors can be found at the heart of many modern devices. One of the most recognizable types of transistors are Insulated Gate Bipolar Transistors (IGBTs). These devices are versatile, efficient, and reliable, making them an ideal choice for many applications.The FF200R17KE3HOSA1, for instance, is a 1700V IGBT module from Fairchild Semiconductor, which combines seven IGBTs, seven diode chips, and two RC Snubbers into a single package. This makes it a suitable choice for medium- to high-power applications.The FF200R17KE3HOSA1 application field includes: Solar power systems, Uninterrupted Power Supplies (UPS), Electric Power Xchange, 3-phase induction motor drives, welding systems, switched-mode power supplies, and more. The module also has a wide operating range—from -40°C to 125°C—which makes it suitable for a variety of applications.The FF200R17KE3HOSA1 is built with advanced IGBT and low-voltage diode chips, which help achieve low-loss performance and high-switching speeds. The IGBT chips use advanced Insulated Gate Commutation Technology (IGCT), which helps reduce losses due to switching, and the low-voltage diode chips are designed for fast switching speeds and low forward voltage.The module also features a variety of protection features, including over-voltage protection, over-temperature protection, under-voltage protection, and short-circuit protection. These protective features help ensure the module is used safely and reliably in various applications.In addition, the FF200R17KE3HOSA1 is rated for high-speed switching operations, with a maximum switching frequency of 1kHz. This makes it ideal for power-isolated systems, such as copiers and manufacturers, as well as for high-frequency switching applications.Finally, the module has a power rating of 800W, a collector-emitter voltage of 1700V, and a collector-emitter saturation voltage of 1.9V at 25°C. This makes it well-suited for a variety of applications, including motor drives and inverter circuits.In summary, the FF200R17KE3HOSA1 is a versatile IGBT module that combines seven IGBTs and seven low voltage diode chips into a single package. With its wide operating range, high-speed switching operations, and protective features, the FF200R17KE3HOSA1 is well-suited for a variety of medium- to high-power applications, such as Solar power systems, Uninterrupted Power Supplies, Electric Power Xchange, 3-phase induction motor drives, welding systems, and switched-mode power supplies.
The specific data is subject to PDF, and the above content is for reference
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