Allicdata Part #: | FF200R12KE3B2HOSA1-ND |
Manufacturer Part#: |
FF200R12KE3B2HOSA1 |
Price: | $ 80.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD IGBT MED PWR 62MM-1 |
More Detail: | IGBT Module Half Bridge 1200V 295A 1050W Chassis ... |
DataSheet: | FF200R12KE3B2HOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 72.91970 |
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 295A |
Power - Max: | 1050W |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 200A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 14nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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FF200R12KE3B2HOSA1 is a module integrated with Insulated Gate Bipolar Transistors (IGBT). These modules are used for a variety of applications that require reliable and efficient power control, such as motor control, power conversion, and power protection. In this article, we will take a look at the application field and working principle of the FF200R12KE3B2HOSA1 module.
Application Field of FF200R12KE3B2HOSA1
The FF200R12KE3B2HOSA1 module is specifically designed for high-current and high-voltage applications, as it offers a maximum current of up to 200A and a maximum voltage of up to 1200V. This makes it ideal for applications that require high levels of power, such as motor control, power conversion, and power protection. It can also be applied in the control of AC and DC motor drives, the conversion of voltage and current, and the switching of DC-DC converters. It is also suitable for applications that require fast switching and high frequency operations, such as high-voltage low-inductance brake choppers and ultra-capacitor exchange applications.
Working Principle of FF200R12KE3B2HOSA1
The FF200R12KE3B2HOSA1 module is based on Insulated Gate Bipolar Transistors (IGBT), which are semiconductor devices that combine the best features of both bipolar transistors and MOSFETs. It is composed of two separate transistors – an N-channel MOSFET and a P-channel MOSFET – which are connected in an inverse parallel configuration. This configuration allows the IGBT module to switch both positive and negative voltages, giving it greater flexibility compared to other semiconductor technologies.
The IGBTs are driven by a gate driver, which is powered by a direct current. When the gate driver is activated, it applies a positive voltage to the gate of the lower P-channel MOSFET, which switches on and allows current to flow. At the same time, a negative voltage is applied to the gate of the upper N-channel MOSFET, which switches off and stops the current from flowing. This process is called “pulse-width modulation,” and it allows the user to control the time, voltage, and current of the device.
The FF200R12KE3B2HOSA1 module is designed for applications that require high levels of power and fast switching, making it an ideal choice for motor control, power conversion, and power protection. Its ability to switch both positive and negative voltages gives it greater flexibility compared to other power semiconductor technologies, making it a popular choice for applications such as AC and DC motor drives, DC-DC converters, and voltage and current conversion.
The specific data is subject to PDF, and the above content is for reference
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