FF200R12KT3HOSA1

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FF200R12KT3HOSA1 are advanced insulated gate bipolar transistors (IGBTs) modules used for several motor control, switching and power conversion applications. The series modules feature an Emitter Controlled IGBT with an integrated XDP® module driver. The FF200R12KT3HOSA1 comes with a 7.68 kWh rated power dissipation and a maximum 700A peak current in an easy-to-assemble TO-247 package.

FF200R12KT3HOSA1 IGBTs are known for its soft switching capability, fast switching speed and high performance, making them ideal for controlling or switching intensive loads like motors, laser diode drivers and other power applications. It also has a Tjung of 200°C, providing a high level of stress resistance and long lifetime.

FF200R12KT3HOSA1 IGBT modules are designed with a 4-zone forced air or water cooling system. The 4-zone cooling system ensures even heat dissipation across the module, thereby improving thermal efficiency and reducing EMI noise.

The FF200R12KT3HOSA1’s innovative design and construction allows it to maintain a low total harmonic distortion, which results in improved power quality. It also offers excellent power efficiency, with a maximum efficiency of 98.7%.

FF200R12KT3HOSA1 IGBT modules provide excellent protection against overvoltage, overcurrent, and overheating, ensuring a longer operational life and reliable operation. These modules are UL Certified and RoHS Compliant, making them suitable for use in most countries and regions.

The FF200R12KT3HOSA1 IGBT Module is a powerful and reliable solution for a wide range of applications including motor control, switching, and power conversion. It provides a high level of stress resistance, soft switching capability, and fast switching speed, and is designed with a 4-zone cooling system to maximize heat dissipation. The module also offers excellent power efficiency and power quality and is UL Certified and RoHS Compliant.

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