FF200R12KT4HOSA1

Series:	C
Part Status:	Active
IGBT Type:	Trench Field Stop
Configuration:	Half Bridge
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	320A
Power - Max:	1100W
Vce(on) (Max) @ Vge, Ic:	2.15V @ 15V, 200A
Current - Collector Cutoff (Max):	5mA
Input Capacitance (Cies) @ Vce:	14nF @ 25V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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FF200R12KT4HOSA1 application field and working principle

FF200R12KT4HOSA1 is an insulated gate bipolar transistor (IGBT) module manufactured by Infineon, the world\'s leading manufacturer of power semiconductors. It is a highly reliable and cost-effective solution for power applications that require high switching frequencies.FF200R12KT4HOSA1 is often used in various industrial motor control applications, such as adjustable speed drive (ASD) systems, frequency converters, UPS systems, as well as solar inverters. It is also suitable for other power switching applications, such as electric furnaces, welding machines, and other high power switching use cases.This IGBT module is designed for reduced power loss and improved system efficiency. It offers an extended operating temperature range of -40°C to +100°C. Furthermore, it offers an over current protection feature that helps protect the IGBT module from over current conditions.The working principle of the FF200R12KT4HOSA1 is simple. It is a three-terminal device consisting of a bipolar junction transistor (BJT) and a reverse-connected insulated gate field-effect transistor (MOSFET). The output voltage is proportional to the control input voltage. When the control voltage is increased, the transistor is turned on and the output voltage drops. When the control voltage is decreased, the transistor is turned off and the output voltage rises. This process enables the IGBT module to switch current with accurately controlled duty-cycle.The main features of the FF200R12KT4HOSA1 module are its high current rating, low on-state voltage drop, high switching frequency, easy to mount and maintain, and thermally insulated baseplate. All these features make it the perfect choice for several applications such as frequency converters and adjustable speed drives.The advantages of using the FF200R12KT4HOSA1 include improved system accuracy and efficiency, increased power ratings, and simpler circuit design. It is also cost-effective as compared to other available technologies. The module has a unique combination of features and performance that make it ideal for use in various power electronics applications.The FF200R12KT4HOSA1 is robust and reliable, making it suitable for challenging industrial environments. It offers temperature, current, and noise protection, all in one package. Moreover, it is compliant with international standards such as UL, TUV, and CCC for product quality assurance.In summary, FF200R12KT4HOSA1 is an advanced insulated gate bipolar transistor module from Infineon, that offers superior performance in various power switching applications. It is designed for cost-effectiveness, reliability, and efficiency. It combines several features, making it a great choice for use in different industrial motor control applications.

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