Allicdata Part #: | FF200R12KS4HOSA1-ND |
Manufacturer Part#: |
FF200R12KS4HOSA1 |
Price: | $ 78.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 1200V 200A |
More Detail: | IGBT Module 2 Independent 1200V 275A 1400W Chassi... |
DataSheet: | FF200R12KS4HOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 71.10810 |
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | 2 Independent |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 275A |
Power - Max: | 1400W |
Vce(on) (Max) @ Vge, Ic: | 3.7V @ 15V, 200A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 13nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FF200R12KS4HOSA1 is one of the most popular IGBT modules that have become increasingly common in the power electronics industry worldwide. This module is a 2nd generation IGBT that has been carefully designed to meet the needs of modern applications.
A prime example of the applications where FF200R12KS4HOSA1 modules can be used is in telecommunications and UPS (uninterruptible power supply) systems. With a maximum blocking voltage of 1200V and a fast output switching speed of 16 nanoseconds, FF200R12KS4HOSA1 provides a dependable and robust solution for power control. Other applications include motor driven systems, traction inverters, and welding applications.
The FF200R12KS4HOSA1 IGBT module is also highly suited for use in energy storage systems, especially for hybrid and electric vehicles. Its high performance and reliability make it suitable for high-power, high frequency applications such as solar power inverters, power supply systems and high-voltage DC (HVDC) transmission.
The working principle of the FF200R12KS4HOSA1 module is based on the advantages of electron tunneling and a simplified inverter topology. The module includes two transistors, a high-side and a low-side IGBT, which are coupled together using a gate driver circuit. When a logic input voltage is applied to the module, the gate driver opens and closes the individual transistors according to the logic levels of the input signal, thereby controlling the flow of current. The resulting voltage and current output is then used to control the power output.
The FF200R12KS4HOSA1 module is a simple and efficient solution for many power control applications. Its high voltage and fast switching capabilities make it suitable for use in the telecommunications and other similar industries. The module also offers a robust and reliable power control solution for electric vehicle and renewable energy systems.
The specific data is subject to PDF, and the above content is for reference
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