FF200R12KS4PHOSA1 Allicdata Electronics
Allicdata Part #:

FF200R12KS4PHOSA1-ND

Manufacturer Part#:

FF200R12KS4PHOSA1

Price: $ 88.36
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOD IGBT MED PWR 62MM-1
More Detail: IGBT Module Half Bridge 1200V 275A 1400W Chassis ...
DataSheet: FF200R12KS4PHOSA1 datasheetFF200R12KS4PHOSA1 Datasheet/PDF
Quantity: 1000
8 +: $ 80.32220
Stock 1000Can Ship Immediately
$ 88.36
Specifications
Series: --
Part Status: Active
IGBT Type: --
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 275A
Power - Max: 1400W
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 200A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 13nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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The FF200R12KS4PHOSA1 is a state-of-the-art three-phase inverter IGBT module, designed for use in a variety of applications. It features the latest technology, including advanced gate driving, optimized gate insulation and robust gate and emitter control.

The FF200R12KS4PHOSA1 is a perfect choice for most applications where high power, high frequency, and efficient operation are desired. The design offers excellent noise reduction, improved load management, and protection features to ensure long life and reliable operation. It is also designed with low on-state losses, switching losses, and low cost of operation.

The FF200R12KS4PHOSA1 module is a popular choice for inverter, motor drive control, uninterruptible power supply (UPS) systems, and heating, ventilating, and air conditioning (HVAC) applications. It is capable of providing a wide range of output current, from 9A to 109A, depending on the particular application. The module also supports a wide range of voltage ratings, from 500V to 650V, with a variety of switching configurations used for different types of applications. The FF200R12KS4PHOSA1 also offers a wide range of temperature rating, from 45°C to 150°C.

The FF200R12KS4PHOSA1 works on the principle of insulated-gate bipolar transistors (IGBTs). When used in power conversion and motor drive applications, these devices can be used to control the flow of currents in an efficient manner. IGBTs can provide high powered, highly efficient switch mode power conversion and motor control solutions. The IGBTs are composed of a number of small transistors that are placed in a series to form a transistor array. Each transistor in the array is capable of conducting or blocking current, depending on the gate voltage.

The FF200R12KS4PHOSA1 can be used for a variety of different applications, such as AC/DC inverters, motor control, UPS systems, HVAC systems, and more. Its robust design and high power capability make it a reliable and efficient choice for many applications. With its wide range of voltage ratings and switching configurations, it can be used in a variety of environments. The advanced gate driving and optimized gate insulation provide for improved power efficiency and reliability in operation.

The specific data is subject to PDF, and the above content is for reference

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