FF200R17KE4HOSA1 Allicdata Electronics
Allicdata Part #:

FF200R17KE4HOSA1-ND

Manufacturer Part#:

FF200R17KE4HOSA1

Price: $ 82.44
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 1200V 200A
More Detail: IGBT Module Trench Field Stop 2 Independent 1700V ...
DataSheet: FF200R17KE4HOSA1 datasheetFF200R17KE4HOSA1 Datasheet/PDF
Quantity: 1000
10 +: $ 74.94620
Stock 1000Can Ship Immediately
$ 82.44
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 310A
Power - Max: 1250W
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 18nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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IGBT (Insulated Gate Bipolar Transistor) modules are an essential component of power electronics, reducing the cost and size of many circuits compared to the traditional switches used in similar applications. FF200R17KE4HOSA1 is a popular IGBT module used in many applications due to its high efficiency, low conduction losses, and wide operating range. Its characteristics and ability to regulate current help make it suitable for a range of applications.

Power conversion and regulation is the primary application for FF200R17KE4HOSA1. The module is mainly used in motor control, electric vehicle (EV) charging, solar inverters, and other related applications. It is also used in industrial applications in welding and plasma cutting equipment, as well as in home appliances such as washing machines and dishwashers. Additionally, the module can be used in other applications such as chargers, electric motorcycles and scooters, phase shifting power supplies, and power systems.

The working principle of the FF200R17KE4HOSA1 can be explained with reference to its internal components. The module consists of two IGBTs, four diodes, and a resistive gate driving circuit. This resistive gate driving circuit is used to control the gate voltage, which in turn determines the switching behavior of the IGBT. The IGBTs are responsible for carrying the load currents and clamping the voltages between their respective collector and emitter terminals. The diodes are used for reverse current protection, ensuring that no overvoltage is created by the reverse current which can damage the module.

The FF200R17KE4HOSA1 has a high power density and is suitable for applications that require efficient current flow and control. It is also highly reliable due to its robust construction. Additionally, it is capable of withstanding a wide range of temperatures, making it suitable for applications that are exposed to extreme conditions. The module can also be used to achieve a wide operating range, which makes it an ideal choice for applications requiring intricate switching capabilities.

In conclusion, the FF200R17KE4HOSA1 is a reliable and robust IGBT module that can be used in a wide range of applications. Its ability to efficiently manage power and regulate current makes it an excellent choice for applications requiring delicate switching control. Its compact size, high power density, and wide operating range make it an ideal choice for applications that require maximum efficiency and performance.

The features and benefits of the FF200R17KE4HOSA1 make it the perfect choice for applications requiring efficient power management. From motor control to solar inverters, electric vehicles to home appliances, the FF200R17KE4HOSA1 provides the necessary performance and reliability that many applications require. It is an essential component of any power electronics system, and its high efficiency, wide range of operations, and durable construction make it suitable for any application.

The specific data is subject to PDF, and the above content is for reference

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