Allicdata Part #: | FKI06075-ND |
Manufacturer Part#: |
FKI06075 |
Price: | $ 0.40 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | MOSFET N-CH 60V 52A TO-220F |
More Detail: | N-Channel 60V 52A (Tc) 40W (Tc) Through Hole TO-22... |
DataSheet: | FKI06075 Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.35653 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3810pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 53.6nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 6.3 mOhm @ 39A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 52A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FKI06075 is a field effect transistor (FET) that is a single, enhancement mode, N-channel MOSFET (metal oxide semiconductor field effect transistor). It is built up on an oxide-semiconductor substrate chassis and works as a voltage-controlled switch. It controls the current flow between the two terminals without any mechanical parts involved.
The FKI06075 is designed to work in low-power electronics systems, such as the control circuits for power supplies and communication devices. It has a drain current rating of 0.8A (ID = 0.25A) and a drain-source voltage rating of 30V (VDS = 30V). It is often used in applications such as mobile phones, digital cameras, medical monitoring systems and automotive electronics. The FKI06075 is also used in applications such as solar cell controllers and laser modulation.
The FKI06075\'s working principle is based on the MOSFET\'s ability to control current flow via electric field. It works by applying a voltage between its gate and source terminals to create an electric field which controls the current flow through it. Adjusting the voltage applied to the gate terminals allows the current flow to be precisely controlled.
The FKI06075 is designed so that it uses less power than other MOSFETs, and is suitable for use in low power electronics applications. It is built with a lower threshold voltage, which means that less voltage is needed to turn the transistor on. This makes the FKI06075 well suited for circuits that need to switch on and off quickly and easily.
The FKI06075 is also designed to have a low on-resistance, which means that it has a low resistance when it is turned on. This allows it to handle more current than other MOSFETs, which makes it ideal for applications that require high currents. The FKI06075 also has a fast switching speed which makes it ideal for controlling high-speed applications.
Overall, the FKI06075 is a single, enhancement mode, N-channel MOSFET that is designed for use in low-power electronics applications. With its low power consumption, low threshold voltage, low on-resistance and fast switching speed, it is well suited for applications requiring precise current control, high current handling and fast switching speeds. With its features and advantages, the FKI06075 is a great choice for numerous electronic applications.
The specific data is subject to PDF, and the above content is for reference
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